HAT2165H-EL-E Renesas Electronics America, HAT2165H-EL-E Datasheet - Page 8

• Manufacturer Part Number: HAT2165H-EL-E
• Description: MOSFET N-CH 30V 55A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2165H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5180pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2165H
Rev.6.00 Sep 20, 2005 page 6 of 7
Vin
10 V
Vin Monitor
Rg
Switching Time Test Circuit
D.U.T.
R
L
V
= 10 V
DS
Vout
Monitor
t d(on)
Vout
Vin
Switching Time Waveform
10%
10%
90%
t r
t d(off)
90%
90%
10%
t f