HAT2165H-EL-E Renesas Electronics America, HAT2165H-EL-E Datasheet - Page 9

• Manufacturer Part Number: HAT2165H-EL-E
• Description: MOSFET N-CH 30V 55A LFPAK
• Manufacturer: Renesas Electronics America

Specifications of HAT2165H-EL-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.3 mOhm @ 27.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 55A
• Vgs(th) (max) @ Id: 2.5V @ 1mA
• Gate Charge (qg) @ Vgs: 33nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 5180pF @ 10V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: LFPAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

HAT2165H
Package Dimensions
Ordering Information
HAT2165H-EL-E
Note: For some grades, production may be terminated. Please contact the Renesas sales office to check the state of
Rev.6.00 Sep 20, 2005 page 7 of 7
JEITA Package Code
Part Name
production before ordering the product.
SC-100
RENESAS Code
PTZZ0005DA-A
2500 pcs
1
1.27
Quantity
4.0 ± 0.2
5.3 Max
4.9
Package Name
LFPAK
0.40 ± 0.06
5
4
0.75 Max
0.10
MASS[Typ.]
0.20
0.080g
0.25
Taping
+0.05
–0.03
0° – 8°
M
0.25
+0.05
–0.03
Shipping Container
(Ni/Pd/Au plating)
3.3
Unit: mm