2SK2233(F) Toshiba, 2SK2233(F) Datasheet

2SK2233(F)

Manufacturer Part Number

2SK2233(F)

Description

MOSFET N-CH 60V 45A 2-16C1B

Manufacturer

Toshiba

Datasheet

1.2SK2233F.pdf (6 pages)

Specifications of 2SK2233(F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

30 mOhm @ 25A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

45A

Vgs(th) (max) @ Id

2V @ 1mA

Gate Charge (qg) @ Vgs

60nC @ 10V

Input Capacitance (ciss) @ Vds

1800pF @ 10V

Power - Max

100W

Mounting Type

Through Hole

Package / Case

2-16C1B (TO-247 N)

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

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Chopper Regulator, DC−DC Converter and Motor Drive

Applications

Absolute Maximum Ratings

Thermal Characteristics

4-V gate drive

Low drain−source ON resistance

High forward transfer admittance

Low leakage current

Enhancement mode

Drain−source voltage

Drain−gate voltage (R

Gate−source voltage

Drain current

Drain power dissipation (Tc = 25°C)

Single pulse avalanche energy

Avalanche current

Repetitive avalanche energy (Note 3)

Channel temperature

Storage temperature range

Note:

Thermal resistance, channel to case

Thermal resistance, channel to ambient

Note 1: Ensure that the channel temperature does not exceed 150°C.

Note 2: V

Note 3: Repetitive rating: pulse width limited by maximum channel temperature

This transistor is an electrostatic-sensitive device.

Please handle with caution.

Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and

Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).

Characteristics

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (L

= 25 V, T

Pulse (Note 1)

DC (Note 1)

= 20 kΩ)

= 25°C (initial), L = 165 μH, R

: I

: V

(Note 2)

DSS

= 0.8 to 2.0 V (V

= 100 μA (max) (V

(Ta = 25°C)

Symbol

: R

: |Y

DGR

GSS

DSS

Symbol

stg

th (ch−a)

th (ch−c)

DS (ON)

2SK2233

| = 27 S (typ.)

= 0.022 Ω (typ.)

−55 to 150

= 10 V, I

Rating

±20

180

100

246

150

= 60 V)

Max

1.25

= 25 Ω, I

= 1 mA)

°C / W

Unit

°C

= 45 A

Weight: 4.6 g (typ.)

JEDEC

JEITA

TOSHIBA

1. GATE

2. DRAIN (HEAT SINK)

3. SOURCE

–π−MOSV)

2-16C1B

2009-09-29

―

2SK2233

Unit: mm

Related parts for 2SK2233(F)

2SK2233(F) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...

Page 3

3 2SK2233 2009-09-29 ...

Page 4

4 2SK2233 2009-09-29 ...

Page 5

Ω 165 μ 2SK2233 B 1 ⎛ ⎞ VDSS = ⋅ ⋅ ⋅ ⎜ ⎟ − V ⎝ ⎠ VDSS DD ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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