2SK3388(TE24L,Q) Toshiba, 2SK3388(TE24L,Q) Datasheet

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2SK3388(TE24L,Q)

Manufacturer Part Number
2SK3388(TE24L,Q)
Description
MOSFET N-CH 250V 20A SC-97
Manufacturer
Toshiba
Datasheet

Specifications of 2SK3388(TE24L,Q)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
105 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
250V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
3.5V @ 1mA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
4000pF @ 10V
Power - Max
125W
Mounting Type
Surface Mount
Package / Case
2-9F1B
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain-source ON resistance: R
High forward transfer admittance: |Y
Low leakage current: I
Enhancement mode: V
Drain-source voltage
Drain-gate voltage (R
Gate-source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note:
Thermal resistance, channel to case
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel
This transistor is an electrostatic-sensitive device. Please handle with caution.
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
temperature
Characteristics
DD
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSV)
= 50 V, T
Characteristics
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
DSS
th
= 25°C (initial), L = 2.06 mH, I
= 1.5 to 3.5 V (V
(Note 1)
(Note 2)
= 100 μA (V
DS (ON)
(Ta = 25°C)
Symbol
V
V
V
fs
E
E
T
I
I
T
DS
DGR
GSS
P
DSS
I
DP
AR
| = 20 S (typ.)
AS
AR
stg
D
ch
D
2SK3388
DS
= 250 V)
= 82 mΩ (typ.)
R
Symbol
= 10 V, I
th (ch-c)
−55~150
Rating
12.5
250
250
±20
125
487
150
D
20
60
20
AR
1
= 1 mA)
Max
1.00
= 20 A, R
°C/W
Unit
Unit
mJ
mJ
°C
°C
W
G
V
V
V
A
A
= 25 Ω
Weight: 0.74 g (typ.)
Circuit Configuration
JEDEC
JEITA
TOSHIBA
Notice:
Please use the S1 pin for gate
input signal return. Make
sure that the main current
flows into the S2 pin.
1
2
2-9F1B
SC-97
2009-09-29
2SK3388
4
3
Unit: mm

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2SK3388(TE24L,Q) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). ...

Page 2

... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment. (Note 5) (Ta = 25° ...

Page 3

I – 4.5 16 Common source Tc = 25°C Pulse test 3 Drain-source voltage V ( – ...

Page 4

R – (ON) 200 Common source 160 Pulse test 120 −80 − Case temperature Tc (°C) Capacitance – 10000 ...

Page 5

Duty = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single pulse 0.01 0.00001 0.0001 Safe operating area 100 I D max (pulsed) * 100 μ max (continuous operation Tc = 25°C 1 ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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