2SK4108(F,T) Toshiba, 2SK4108(F,T) Datasheet

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2SK4108(F,T)

Manufacturer Part Number
2SK4108(F,T)
Description
MOSFET N-CH 500V 20A SC-67
Manufacturer
Toshiba
Datasheet

Specifications of 2SK4108(F,T)

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
270 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
20A
Vgs(th) (max) @ Id
4V @ 1mA
Gate Charge (qg) @ Vgs
70nC @ 10V
Input Capacitance (ciss) @ Vds
3400pF @ 25V
Power - Max
150W
Mounting Type
Through Hole
Package / Case
2-16C1B (TO-247 N)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Switching Regulator Applications
Absolute Maximum Ratings
Thermal Characteristics
Low drain−source ON resistance
High forward transfer admittance
Low leakage current
Enhancement mode
Drain−source voltage
Drain−gate voltage (R
Gate−source voltage
Drain current
Drain power dissipation (Tc = 25°C)
Single-pulse avalanche energy
Avalanche current
Repetitive avalanche energy (Note 3)
Channel temperature
Storage temperature range
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the
Thermal resistance, channel to case
Thermal resistance, channel to
ambient
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: V
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum
ratings. Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability
Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e.
reliability test report and estimated failure rate, etc).
DD
Characteristic
Characteristic
TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (π-MOS VI)
= 90 V, T
GS
DC
Pulse (Note 1)
= 20 kΩ)
ch
: V
= 25°C (initial), L = 4.08 mH, R
(Note 1)
(Note 2)
: I
th
DSS
= 2.0 to 4.0 V (V
= 100 μA (max) (V
(Ta = 25°C)
R
R
Symbol
Symbol
th (ch−c)
th (ch−a)
: R
: |Y
V
V
V
E
E
T
I
I
T
DGR
P
GSS
DSS
I
DP
AR
stg
AS
AR
D
ch
D
DS (ON)
2SK4108
fs
| = 14 S (typ.)
DS
= 0. 21Ω (typ.)
= 10 V, I
−55~150
Rating
0.833
DS
Max
500
500
±30
150
960
150
20
80
20
15
50
1
G
= 500 V)
= 25 Ω, I
D
= 1 mA)
°C / W
°C / W
Unit
Unit
mJ
mJ
°C
°C
W
AR
V
V
V
A
A
A
= 20 A
Weight: 4.6 g (typ.)
JEDEC
JEITA
TOSHIBA
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
2-16C1B
2009-09-29
2SK4108
Unit: mm

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2SK4108(F,T) Summary of contents

Page 1

... Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. ...

Page 2

... Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The environmental matters such as the RoHS compatibility of Product. The ...

Page 3

I – Common source 25°C Pulse Test Drain-source voltage V DS (V) I – ...

Page 4

(ON) 1.0 Common source Pulse Test 0.8 0 20A 0.4 0.2 0 −80 − Case temperature Tc (°C) Capacitance – 10000 1000 ...

Page 5

SAFE OPERATING AREA 1000 I D max (pulse) * 100 I D max (continuous OPEATION Tc = 25°C 1 ※ Single pulse Ta=25℃ 0.1 Curves must be derated linearly with increase in V DSS max ...

Page 6

... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...

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