2SK3906(Q) Toshiba, 2SK3906(Q) Datasheet
2SK3906(Q)
Specifications of 2SK3906(Q)
Related parts for 2SK3906(Q)
2SK3906(Q) Summary of contents
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... TOSHIBA Field Effect Transistor Silicon N-Channel MOS Type (MACH II π-MOS VI) Switching Regulator Applications • Small gate charge (typ.) • Fast reverse recovery time 400 ns (typ.) rr • Low drain-source ON-resistance: R • High forward transfer admittance: |Y • Low leakage current 500 μA (V DSS • ...
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... Labels. Not underlined: [[Pb]]/INCLUDES > MCV Underlined: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]] Please contact your TOSHIBA sales representative for details as to environmental matters such as the RoHS compatibility of Product. The RoHS is the Directive 2002/95/EC of the European Parliament and of the Council of 27 January 2003 on the restriction of the use of certain hazardous substances in electrical and electronic equipment ...
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I – COMMON SOURCE 25°C PULSE TEST DRAIN−SOURCE VOLTAGE – ...
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R – (ON) 1000 COMMON SOURCE PULSE TEST 800 600 400 5 200 −80 − CASE TEMPERATURE Tc (°C) C – 10000 1000 ...
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Duty=0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.001 10μ 100μ SAFE OPERATING AREA 1000 I D max (PULSE) * 100 100 μ max (CONTINUOUS OPERATION Tc = ...
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... Product shall not be used for or incorporated into any products or systems whose manufacture, use, or sale is prohibited under any applicable laws or regulations. • The information contained herein is presented only as guidance for Product use. No responsibility is assumed by TOSHIBA for any infringement of patents or any other intellectual property rights of third parties that may result from the use of Product. No license to any intellectual property right is granted by this document, whether express or implied, by estoppel or otherwise. • ...