2SK2221-E Renesas Electronics America, 2SK2221-E Datasheet - Page 3

• Manufacturer Part Number: 2SK2221-E
• Description: MOSFET N-CH 200V 8A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of 2SK2221-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 8A
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -

2SK2220, 2SK2221
Silicon N Channel MOS FET
Application
Low frequency power amplifier
Complementary pair with 2SJ351, 2SJ352
Features
Outline
Rev.2.00 Sep 07, 2005 page 1 of 5
High power gain
Excellent frequency response
High speed switching
Wide area of safe operation
Enhancement-mode
Good complementary characteristics
Equipped with gate protection diodes
RENESAS Package code: PRSS0004ZE-A
(Package name: TO-3P)
1
2
3
G
S
D
(Previous: ADE-208-1352)
1. Gate
2. Source
3. Drain
(Flange)
REJ03G1004-0200
Sep 07, 2005
Rev.2.00