2SK2221-E Renesas Electronics America, 2SK2221-E Datasheet - Page 4

• Manufacturer Part Number: 2SK2221-E
• Description: MOSFET N-CH 200V 8A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of 2SK2221-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 8A
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -

2SK2220, 2SK2221
Absolute Maximum Ratings
Drain to source voltage
Gate to source voltage
Drain current
Body to drain diode reverse drain current
Channel dissipation
Channel temperature
Storage temperature
Note:
Electrical Characteristics
Drain to source
breakdown voltage
Gate to source breakdown voltage
Gate to source cutoff voltage
Drain to source saturation voltage
Forward transfer admittance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Note:
Rev.2.00 Sep 07, 2005 page 2 of 5
1. Value at Tc = 25
2. Pulse Test
Item
Item
2SK2220
2SK2221
°
C
2SK2220
2SK2221
Symbol
V
V
V
V
Coss
(BR)GSS
(BR)DSX
Crss
Ciss
DS(sat)
GS(off)
|y
t
t
on
off
fs
|
0.15
Min
180
200
±20
0.7
—
—
—
—
—
—
Symbol
Pch*
V
V
Tstg
Tch
I
GSS
I
DSX
DR
D
Typ
600
800
250
1.0
90
—
—
—
—
—
8
1
Max
1.45
1.4
12
—
—
—
—
—
—
—
—
–55 to +150
Ratings
180
200
100
150
Unit
20
8
8
pF
pF
pF
ns
ns
V
V
V
V
S
I
I
I
I
I
V
f = 1 MHz
V
D
G
D
D
D
GS
DD
= 10 mA, V
= 100 A, V
= 100 mA, V
= 8 A, V
= 3 A, V
= 30 V, I
= –5 V, V
Test conditions
GD
DS
D
= 10 V*
= 0 V*
GS
DS
= 4 A
DS
Unit
DS
°
°
= –10 V
= 10 V,
W
V
V
A
A
(Ta = 25°C)
(Ta = 25°C)
C
C
= 10 V
= 0
2
2