2SK2221-E Renesas Electronics America, 2SK2221-E Datasheet - Page 5

• Manufacturer Part Number: 2SK2221-E
• Description: MOSFET N-CH 200V 8A TO-3P
• Manufacturer: Renesas Electronics America

Specifications of 2SK2221-E

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 8A
• Input Capacitance (ciss) @ Vds: 600pF @ 10V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-3P
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Vgs(th) (max) @ Id: -
• Rds On (max) @ Id, Vgs: -

2SK2220, 2SK2221
Main Characteristics
Rev.2.00 Sep 07, 2005 page 3 of 5
150
100
10
50
10
8
6
4
2
0
8
6
4
2
0
0
V
10 V
Drain to Source Voltage V
Power vs. Temperature Derating
Gate to Source Voltage V
Typical Transfer Characteristics
GS
Typical Output Characteristics
V
Case Temperature T
DS
=
10
= 10 V
2
6
9
8
7
50
5
20
4
4
Pch = 125 W
30
6
100
3
0
C
T
2
C
GS
(°C)
DS
40
8
= 25 ° C
1
(V)
(V)
150
50
10
1.0
0.8
0.6
0.4
0.2
1.0
0.5
0.2
20
10
10
0
5
2
8
6
4
2
0
5
Drain to Source Voltage V
Drain to Source Voltage V
Gate to Source Voltage V
Typical Transfer Characteristics
Maximum Safe Operation Area
Typical Output Characteristics
T
V
C
DS
10
= 25 ° C
0.4
= 10 V
2
20
0.8
4
50
2SK2220 2SK2221
1.2
100
6
9
Ta = 25°C
V
GS
200
GS
DS
1.6
DS
8
= 10 V
7
6
5
4
3
2
1
(V)
(V)
(V)
500
0
8
2.0
10