BSS138W L6327 Infineon Technologies, BSS138W L6327 Datasheet - Page 2

• Manufacturer Part Number: BSS138W L6327
• Description: MOSFET N-CH 60V 280MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138W L6327

• Package / Case: SOT-323
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 280mA
• Vgs(th) (max) @ Id: 1.4V @ 26µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.28 A
• Power Dissipation: 500 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000245411

Rev. 2.41
Parameter
Thermal characteristics
Thermal resistance,
junction - minimal footprint
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source leakage current
Gate-source leakage current
Drain-source on-state resistance
Transconductance
j
=25 °C, unless otherwise specified
Symbol Conditions
R
V
V
I
I
R
g
D (off)
GSS
fs
(BR)DSS
GS(th)
thJA
DS(on)
V
V
V
V
V
V
V
V
V
V
|V
I
D
GS
GS
DS
GS
DS
GS
GS
GS
GS
GS
=0.22 A
DS
page 2
=60 V,
=60 V,
= 0 V, I
=V
=0 V, T
=0 V, T
=20 V, V
=4.5 V, I
=4.5 V, I
=10 V, I
|>2|I
DS
, I
D
|R
D
D
j
j
=25 °C
=150 °C
D
=250 µA
=26 µA
D
D
DS
DS(on)max
=0.2 A
=0.03 A
=0.16 A
=0 V
,
min.
0.12
0.6
60
-
-
-
-
-
-
-
Values
0.23
typ.
1.0
3.2
2.1
1
3
-
-
-
-
max.
250
1.4
0.1
4.0
3.5
10
BSS138W
5
6
-
-
Unit
K/W
V
µA
nA
Ω
S
2009-11-19