BSS138W L6433 Infineon Technologies, BSS138W L6433 Datasheet - Page 6

• Manufacturer Part Number: BSS138W L6433
• Description: MOSFET N-CH 60V 280MA SOT-323
• Manufacturer: Infineon Technologies
• Series: SIPMOS®r

Specifications of BSS138W L6433

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 200mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 280mA
• Vgs(th) (max) @ Id: 1.4V @ 26µA
• Gate Charge (qg) @ Vgs: 1.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 43pF @ 25V
• Power - Max: 500mW
• Mounting Type: Surface Mount
• Package / Case: SOT-323
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000245412

Rev. 2.41
9 Drain-source on-state resistance
R
11 Typ. capacitances
C =f(V
DS(on)
10
10
10
DS
=f(T
8
6
4
2
0
2
1
0
-60
); V
0
j
); I
GS
D
=0 V; f =1 MHz; T
=0.2 A; V
-20
10
20
%98
GS
V
T
=10 V
DS
j
[°C]
[V]
60
j
typ
=25°C
20
100
Coss
Ciss
Crss
140
30
page 6
10 Typ. gate threshold voltage
V
parameter: I
12 Forward characteristics of reverse diode
I
parameter: T
F
GS(th)
=f(V
10
10
10
1.6
1.2
0.8
0.4
10
=f(T
SD
2
0
-1
-2
-3
0
-60
)
0
j
); V
D
j
DS
-20
0.4
=V
150 °C
GS
; I
20
D
0.8
=26 µA
V
T
25 °C
j
SD
[°C]
60
[V]
%98
typ
1.2
%2
150 °C, 98%
25 °C, 98%
100
BSS138W
1.6
140
2009-11-19
2