BSS138LT3G ON Semiconductor, BSS138LT3G Datasheet - Page 3

• Manufacturer Part Number: BSS138LT3G
• Description: MOSFET N-CH 50V 200MA SOT-23
• Manufacturer: ON Semiconductor

Specifications of BSS138LT3G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 3.5 Ohm @ 200mA, 5V
• Drain To Source Voltage (vdss): 50V
• Current - Continuous Drain (id) @ 25° C: 200mA
• Vgs(th) (max) @ Id: 1.5V @ 1mA
• Input Capacitance (ciss) @ Vds: 50pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 3.5 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 0.1 S
• Drain-source Breakdown Voltage: 50 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.2 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS138LT3G; BSS138LT3GOSTR

Final Product/Process Change Notification #16257
ELECTRICAL CHARACTERISTIC SUMMARY:
There is no change in electrical parametric performance. Characterization data is available
upon request.
CHANGED PART IDENTIFICATION:
SOT23 Products assembled with the Copper Wire from the ON Semiconductor facility in
Leshan, China, will have a Finish Good Date Code representing Work Week 31, 2009 or
newer.
Issue Date: 26 May 2009
Rev.14 Jun 2007
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