BSS138N L6327 Infineon Technologies, BSS138N L6327 Datasheet

MOSFET N-CH 60V 230MA SOT-23

BSS138N L6327

Manufacturer Part Number
BSS138N L6327
Description
MOSFET N-CH 60V 230MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheets

Specifications of BSS138N L6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.5 Ohm @ 230mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
230mA
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
1.4nC @ 10V
Input Capacitance (ciss) @ Vds
41pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
3.5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.23 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
230mA
Drain Source Voltage Vds
60V
On Resistance Rds(on)
3.5ohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
1V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSS138N L6327
BSS138NL6327INTR
BSS138NL6327XT
SP000074207
Rev. 2.82
Features
• N-channel
• Enhancement mode
• Logic level
• dv /dt rated
• Pb-free lead-plating; RoHS compliant
Parameter
Continuous drain current
Pulsed drain current
Reverse diode dv /dt
Gate source voltage
ESD sensitivity
ESD sensitivity
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
BSS138N
BSS138N
®
Small-Signal-Transistor
Package
PG-SOT-23
PG-SOT-23
Tape and Reel
L6327: 3000
L6433: 10000
Symbol Conditions
I
I
dv /dt
V
P
T
D
D,pulse
j
GS
tot
, T
stg
Marking
SKs
SKs
T
T
T
I
di /dt =200 A/µs,
T
T
JESD22-A114 (HBM)
D
MIL-STD 883 (HBM)
page 1
A
A
A
j,max
A
=0.23 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
DS
Product Summary
V
R
I
D
=48 V,
DS
DS(on),max
Class 1 (<1999V)
Class 0 (<250V)
-55 ... 150
55/150/56
Value
0.23
0.18
0.92
0.36
±20
PG-SOT-23
6
60
3.5
0.23
BSS138N
Unit
A
kV/µs
V
W
°C
V
A
2009-02-11

Related parts for BSS138N L6327

BSS138N L6327 Summary of contents

Page 1

SIPMOS Small-Signal-Transistor Features • N-channel • Enhancement mode • Logic level • dv /dt rated • Pb-free lead-plating; RoHS compliant Type Package BSS138N PG-SOT-23 BSS138N PG-SOT-23 Parameter Continuous drain current Pulsed drain current Reverse diode dv /dt Gate source ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - minimal footprint Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Drain-source leakage current Gate-source leakage current Drain-source on-state resistance Transconductance Rev. 2.82 Symbol Conditions R thJA =25 °C, unless ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot A 0.4 0.3 0.2 0 Safe operating area I =f =25 ° parameter limited by on-state resistance ...

Page 5

Typ. output characteristics I =f =25 ° parameter 0 0.5 0.4 0.3 0.2 0 Typ. transfer characteristics I =f(V ); ...

Page 6

Drain-source on-state resistance R =f =0. DS(on % -60 - Typ. capacitances C =f MHz ...

Page 7

Typ. gate charge V =f =0.23 A pulsed GS gate D parameter 0.2 0.4 Q gate Rev. 2.82 14 Drain-source breakdown voltage V =f(T BR(DSS) ...

Page 8

Package Outline: Footprint: Dimensions in mm Rev. 2.82 Packaging: page 8 BSS138N 2009-02-11 ...

Page 9

... Due to technical requirements, components may contain dangerous substances. For information on the types in question, please contact your nearest Infineon Technologies office. Infineon Technologies' components may only be used in life-support devices or systems with the expressed written approval of Infineon Technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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