BSS84P L6327 Infineon Technologies, BSS84P L6327 Datasheet

MOSFET P-CH 60V 170MA SOT-23

BSS84P L6327

Manufacturer Part Number
BSS84P L6327
Description
MOSFET P-CH 60V 170MA SOT-23
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of BSS84P L6327

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
8 Ohm @ 170mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
170mA
Vgs(th) (max) @ Id
2V @ 20µA
Gate Charge (qg) @ Vgs
1.5nC @ 10V
Input Capacitance (ciss) @ Vds
19pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
8 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.17 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
BSS84P L6327
BSS84PL6327INTR
BSS84PL6327XT
SP000082879
Feature
·
·
·
·
·
SIPMOS  Small-Signal-Transistor
Type
BSS 84 P
BSS 84 P
Maximum Ratings, at
Parameter
Continuous drain current
T
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Avalanche energy, periodic limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
A
A
A
A
P-Channel
Enhancement mode
Logic Level
Avalanche rated
dv/dt rated
=-0.17A, V
=-0.17 A , V
=25°C
=70°C
=25°C
=25°C
Rev 2.4
DS
DD
=-48V, di/dt=-200A/µs, T
=-25V, R
PG-SOT-23
PG-SOT-23
Package
GS
T A
=25
= 25 °C, unless otherwise specified
jmax
=150°C
Tape and Reel
L6327:3000pcs/r.
L6433:10000pcs/r. YBs
jmax
Page 1
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
Marking
YBs
-55... +150
55/150/56
Product Summary
V
R
I
D
Value
0.036
-0.17
-0.14
-0.68
DS
DS(on)
0.36
±20
2.6
-6
PG-SOT-23
Gate
pin1
3
2006-12-05
-0.17
BSS 84 P
-60
8
1
Unit
A
mJ
kV/µs
V
W
°C
Source
pin 2
VPS05161
Drain
pin 3
V
A
2

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BSS84P L6327 Summary of contents

Page 1

SIPMOS  Small-Signal-Transistor Feature · P-Channel · Enhancement mode · Logic Level · Avalanche rated · dv/dt rated Type Package BSS 84 P PG-SOT-23 BSS 84 P PG-SOT- Maximum Ratings, at Parameter Continuous drain current T =25°C A ...

Page 2

Thermal Characteristics Parameter Characteristics Thermal resistance, junction - soldering point (Pin 3) SMD version, device on PCB: @ min. footprint cooling area Electrical Characteristics, at Parameter Static Characteristics Drain-source breakdown voltage V =0, I =-250µA ...

Page 3

Electrical Characteristics, at Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau ...

Page 4

Power dissipation tot A BSS 84 P 0.38 W 0.32 0.28 0.24 0.2 0.16 0.12 0.08 0. Safe operating area ...

Page 5

Typ. output characteristic parameter °C j BSS 0.36W tot -0.32 -0.28 -0.24 -0.2 -0.16 -0.12 -0.08 -0. ...

Page 6

Drain-source on-state resistance DS(on) j parameter : I = -0. BSS 98% 8 typ -60 - ...

Page 7

Typ. avalanche energy parameter -0. - 1 105 15 Drain-source breakdown ...

Page 8

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life ...

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