AO3460 Alpha & Omega Semiconductor Inc, AO3460 Datasheet
AO3460
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AO3460 Summary of contents
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... AO3460 N-Channel Enhancement Mode Field Effect Transistor General Description The AO3460/L uses advanced trench technology to provide excellent R , low gate charge, and DS(ON) operation with gate voltages as low as 4.5V, in the small SOT-23 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters ...
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... AO3460 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2 1.5 4. (Volts) DS Figure 1: On-Region Characteristics 3 2.5 V =4. 1 0.5 I (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 3.5 3 2.5 2 25°C 1 (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1 10V 6V 0.8 0.6 ...
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... AO3460 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =30V DS I =0.65A 0.0 0.1 0.2 0.3 Q (nC) g Figure 7: Gate-Charge Characteristics 10.000 1.000 R DS(ON) limited 0.100 0.010 T =150°C J(Max) T =25°C C 0.001 0.01 0 (Volts) DS Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 ...