AO3434 Alpha & Omega Semiconductor Inc, AO3434 Datasheet

MOSFET N-CH 30V 3.5A SOT23

AO3434

Manufacturer Part Number
AO3434
Description
MOSFET N-CH 30V 3.5A SOT23
Manufacturer
Alpha & Omega Semiconductor Inc
Datasheet

Specifications of AO3434

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
52 mOhm @ 4.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3.5A
Vgs(th) (max) @ Id
1.8V @ 250µA
Gate Charge (qg) @ Vgs
7.2nC @ 10V
Input Capacitance (ciss) @ Vds
340pF @ 15V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
785-1018-2

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Alpha & Omega Semiconductor, Ltd.
Absolute Maximum Ratings T
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
Current
Pulsed Drain Current
Power Dissipation
Junction and Storage Temperature Range
Thermal Characteristics
Maximum Junction-to-Ambient
Maximum Junction-to-Ambient
Maximum Junction-to-Lead
General Description
The AO3434/L uses advanced trench technology
to provide excellent R
This device is suitable for use as a load switch or
in PWM applications. It is ESD protected.
AO3434 and AO3434L are electrically identical.
-RoHS Compliant
-AO3434L is Halogen Free
AO3434
N-Channel Enhancement Mode Field Effect Transistor
A,F
Parameter
Parameter
G
S
B
C
DS(ON)
T
T
T
T
(SOT-23)
Top View
TO-236
A
A
A
A
A
A
=25°C
=70°C
=25°C
=70°C
and low gate charge.
D
A
=25°C unless otherwise noted
t ≤ 10s
Steady-State
Steady-State
V
V
I
I
P
T
Symbol
D
DM
Symbol
J
DS
GS
D
, T
R
R
STG
θJA
θJL
Features
V
I
R
R
D
DS
DS(ON)
DS(ON)
10 sec
= 4.2A
ESD Protected
(V) = 30V
Typ
100
< 52mΩ
4.2
3.3
1.4
0.9
< 75mΩ
70
63
Maximum
-55 to 150
±20
30
30
Steady-State
G
(V
(V
(V
GS
Max
0.64
125
GS
3.5
2.8
1.0
GS
90
80
= 10V)
= 4.5V)
= 10V)
D
S
www.aosmd.com
Units
Units
°C/W
°C/W
°C/W
°C
W
V
V
A

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AO3434 Summary of contents

Page 1

... The AO3434/L uses advanced trench technology to provide excellent R and low gate charge. DS(ON) This device is suitable for use as a load switch or in PWM applications ESD protected. AO3434 and AO3434L are electrically identical. -RoHS Compliant -AO3434L is Halogen Free TO-236 (SOT-23) Top View ...

Page 2

... AO3434 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...

Page 3

... AO3434 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 8V 10V (Volts) DS Fig 1: On-Region Characteristics 80 V =4. =10V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 102 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 54 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 25° ...

Page 4

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V =4. (nC) g Figure 7: Gate-Charge Characteristics 100.0 10.0 R DS(ON) limited 1.0 0.1 T =150°C J(Max) T =25°C ...

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