NTR4171PT1G ON Semiconductor, NTR4171PT1G Datasheet

MOSFET P-CH 30V 2.2A SOT23

NTR4171PT1G

Manufacturer Part Number
NTR4171PT1G
Description
MOSFET P-CH 30V 2.2A SOT23
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTR4171PT1G

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
75 mOhm @ 2.2A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
2.2A
Vgs(th) (max) @ Id
1.4V @ 250µA
Gate Charge (qg) @ Vgs
15.6nC @ 10V
Input Capacitance (ciss) @ Vds
720pF @ 15V
Power - Max
480mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.075 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
7 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 12 V
Continuous Drain Current
3.5 A
Power Dissipation
1250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

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Part Number:
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Manufacturer:
ON Semiconductor
Quantity:
40 075
Part Number:
NTR4171PT1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
NTR4171PT1G
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Quantity:
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NTR4171P
Power MOSFET
−30 V, −3.5 A, Single P−Channel, SOT−23
Features
Applications
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface−mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2010
May, 2010 − Rev. 1
THERMAL RESISTANCE RATINGS
Drain−to−Source Voltage
Gate−to−Source Voltage
Continuous Drain
Current (Note 1)
Power Dissipation
(Note 1)
Pulsed Drain Current
Operating Junction and Storage Temperature
Source Current (Body Diode)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
Junction−to−Ambient − Steady State (Note 1)
Junction−to−Ambient − t ≤ 10 s (Note 1)
Portable Equipment like Cell Phones, PDA’s, Media Players, etc.
Low R
Low Threshold Voltage
High Power and Current Handling Capability
This is a Pb−Free Device
Load Switch
Optimized for Battery and Load Management Applications in
[2 oz] including traces)
DS(on)
at Low Gate Voltage
Parameter
Parameter
(T
J
Steady
State
t ≤ 5 s
Steady
State
t ≤ 5 s
= 25°C unless otherwise noted)
t
p
= 10 ms
T
T
T
T
A
A
A
A
= 25°C
= 85°C
= 25°C
= 25°C
Symbol
Symbol
R
R
V
V
T
I
P
T
DSS
T
I
DM
qJA
qJA
I
stg
GS
D
S
J
D
L
,
−55 to
Value
−15.0
Max
−2.2
−1.5
−3.5
0.48
1.25
−1.0
260
100
−30
±12
150
260
1
°C/W
Unit
Unit
°C
°C
W
V
V
A
A
A
†For information on tape and reel specifications,
NTR4171PT1G
NTR4171PT3G
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
V
1
Device
(BR)DSS
−30 V
TRF
M
G
(Note: Microdot may be in either location)
CASE 318
STYLE 21
SOT−23
2
ORDERING INFORMATION
G
P−CHANNEL MOSFET
= Specific Device Code
= Date Code
= Pb−Free Package
http://onsemi.com
3
110 mW @ −4.5 V
150 mW @ −2.5 V
75 mW @ −10 V
R
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
DS(on)
S
MARKING DIAGRAM/
Publication Order Number:
PIN ASSIGNMENT
Gate
MAX
1
D
10000/Tape & Reel
3000/Tape & Reel
TRFMG
Drain
3
G
Shipping
NTR4171P/D
I
D
−2.2 A
−1.8 A
−1.0 A
Source
MAX
2

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NTR4171PT1G Summary of contents

Page 1

... Microdot may be in either location) Symbol Max Unit R 260 °C/W qJA R 100 Device qJA NTR4171PT1G NTR4171PT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R MAX I MAX ...

Page 2

MOSFET ELECTRICAL CHARACTERISTICS Parameter OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temperature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 3) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES AND ...

Page 3

V 9.0 −10 V 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1 0.5 1.0 1.5 2.0 2.5 3.0 −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.30 0.25 0.20 0.15 0.10 0.05 0 1.0 ...

Page 4

C iss 800 700 600 500 400 300 C oss 200 100 C rss −V , DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 V = − ...

Page 5

V GS Single Pulse T = 25° 1.0 0.1 0.01 0.1 Figure 13. Maximum Rated Forward Biased 1.0 Duty Cycle = 0.5 0.2 0.1 0.1 0.05 0.02 0.01 Single Pulse 0.01 0.0001 0.001 0.01 TYPICAL CHARACTERISTICS = ...

Page 6

... A A1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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