IPD25N06S4L-30 Infineon Technologies, IPD25N06S4L-30 Datasheet

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IPD25N06S4L-30

Manufacturer Part Number
IPD25N06S4L-30
Description
MOSFET N-CH 60V 25A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD25N06S4L-30

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
30 mOhm @ 25A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
25A
Vgs(th) (max) @ Id
2.2V @ 8µA
Gate Charge (qg) @ Vgs
16.3nC @ 10V
Input Capacitance (ciss) @ Vds
1220pF @ 25V
Power - Max
29W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (5 leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

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Rev. 1.0
OptiMOS
Features
• N-channel - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche current, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD25N06S4L-30
®
-T2 Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
2)
Symbol
I
I
E
I
V
P
T
-
D
D,pulse
AS
j
AS
GS
tot
, T
Marking
4N06L30
stg
T
T
T
I
-
-
T
-
-
D
C
C
C
C
=12.5A
page 1
=25°C, V
=100°C, V
=25°C
=25°C
Conditions
GS
GS
Product Summary
V
R
I
=10V
D
DS
DS(on),max
=10V
1)
-55 ... +175
55/175/56
Value
±16
25
17
92
12
25
29
PG-TO252-3-11
IPD25N06S4L-30
60
30
25
2009-03-23
Unit
A
mJ
A
V
W
°C
V
m
A

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IPD25N06S4L-30 Summary of contents

Page 1

... Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary Marking 4N06L30 Symbol Conditions I T =25° =100° =25°C D,pulse =12. =25°C tot stg - - page 1 IPD25N06S4L-30 DS DS(on),max D PG-TO252-3-11 Value =10V =10V ±16 29 -55 ... +175 55/175/ Unit °C 2009-03-23 ...

Page 2

... V V =0V 1mA (BR)DSS =8µA GS(th =60V, V =0V DSS T =25° =60V, V =0V =125° =16V, V =0V GSS =4.5V, I =12.5A DS(on =10V, I =25A GS D page 2 IPD25N06S4L-30 Values min. typ. max 5 1.2 1.7 2 100 - - 100 - 2009-03-23 Unit K/W V µ ...

Page 3

... D G d(off =48V, I =25A 10V plateau =25° S,pulse V =0V, I =25A =25° =30V /dt =100A/µ (one layer, 70 µm thick) copper area for drain page 3 IPD25N06S4L-30 Values min. typ. max. - 935 1220 - 265 - =10V 3.9 - 1.6 - 12 0.6 0. Unit pF 345 5.1 nC 3.2 16.3 - ...

Page 4

... DS C parameter 1000 100 10 1 0.1 0 Rev. 1.0 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPD25N06S4L- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2009-03-23 ...

Page 5

... DS j parameter 100 Typ. transfer characteristics parameter 100 Rev. 1.0 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter: V 100 4 [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 45 -55 ° °C 35 175 ° -60 [V] page 5 IPD25N06S4L- ° 100 T [° 100 140 180 2009-03-23 ...

Page 6

... Rev. 1.0 10 Typ. capacitances µ 100 140 180 12 Avalanche characteristics parameter: T 100 °C 25 °C 0.1 0.8 0 1.2 1.2 1.4 1.4 0.1 [V] [V] page 6 IPD25N06S4L- MHz [ j(start) 25 °C 100 °C 150 ° 100 t [µs] AV Ciss Coss Crss 25 30 1000 2009-03-23 ...

Page 7

... Avalanche energy [° Typ. gate charge pulsed GS gate D parameter gate Rev. 1.0 14 Drain-source breakdown voltage V BR(DSS 125 175 16 Gate charge waveforms s(th (th [nC] page 7 IPD25N06S4L- -55 - 105 T [° 145 Q gate 2009-03-23 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD25N06S4L-30 2009-03-23 ...

Page 9

... Revision History Version Revision 1.0 Rev. 1.0 Date 23.03.2009 page 9 IPD25N06S4L-30 Changes Final data sheet 2009-03-23 ...

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