IPD075N03LG Infineon Technologies, IPD075N03LG Datasheet

MOSFET N-CH 30V 50A TO252-3

IPD075N03LG

Manufacturer Part Number
IPD075N03LG
Description
MOSFET N-CH 30V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD075N03LG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
7.5 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 10V
Input Capacitance (ciss) @ Vds
1900pF @ 15V
Power - Max
47W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IPD075N03LGINTR
IPD075N03LGXT
SP000249747

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD075N03LG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
IPD075N03LG
Quantity:
2 508
Rev. 1.1
1)
Type
Features
• Fast switching MOSFET for SMPS
• Optimized technology for DC/DC converters
• Qualified according to JEDEC
• N-channel, logic level
• Excellent gate charge x R
• Very low on-resistance R
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Gate source voltage
OptiMOS
Type
Package
Marking
J-STD20 and JESD22
®
3 Power-Transistor
IPD075N03L G
PG-TO252-3-11
075N03L
2)
j
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
3)
product (FOM)
for target applications
Symbol Conditions
I
I
I
E
V
D
D,pulse
AS
AS
GS
IPF075N03L G
PG-TO252-3-23
075N03L
V
V
V
V
T
T
T
I
D
page 1
C
C
C
GS
GS
GS
GS
=12 A, R
=100 °C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
GS
C
C
=25 Ω
Product Summary
V
R
I
C
=25 °C
=100 °C
=25 °C
D
DS
IPS075N03L G
PG-TO251-3-11
075N03L
DS(on),max
IPS075N03L G
IPD075N03L G
Value
350
±20
50
43
49
35
50
50
IPU075N03L G
PG-TO251-3-21
075N03L
IPU075N03L G
IPF075N03L G
7.5
30
50
Unit
A
mJ
V
V
mΩ
A
2009-01-14

Related parts for IPD075N03LG

IPD075N03LG Summary of contents

Page 1

Type OptiMOS ® 3 Power-Transistor Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC • N-channel, logic level • Excellent gate charge x R DS(on) • Very low on-resistance R DS(on) ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case SMD version, device on PCB Electrical characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state ...

Page 5

Typ. output characteristics I =f =25 ° parameter 120 5 V 100 Typ. transfer characteristics I =f |>2|I |R ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 150 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline Footprint: Rev. 1.1 IPD075N03L G IPS075N03L G PG-TO252-3-11 Packaging: page 8 IPF075N03L G IPU075N03L G 2009-01-14 ...

Page 9

Package Outline PG-TO252-3-23: Outline Footprint: Rev. 1.1 IPD075N03L G IPS075N03L G PG-TO252-3-23 page 9 IPF075N03L G IPU075N03L G 2009-01-14 ...

Page 10

Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.1 IPD075N03L G IPS075N03L G PG-TO251-3-11 page 10 IPF075N03L G IPU075N03L G 2009-01-14 ...

Page 11

Package Outline PG-TO251-3-11: Outline PG-TO251-3-21: Outline Rev. 1.1 IPD075N03L G IPS075N03L G PG-TO251-3-21 page 11 IPF075N03L G IPU075N03L G 2009-01-14 ...

Page 12

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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