IPD088N04L G

Manufacturer Part NumberIPD088N04L G
DescriptionMOSFET N-CH 40V 50A TO252-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPD088N04L G datasheet
 


Specifications of IPD088N04L G

Package / CaseDPak, TO-252 (2 leads+tab), SC-63Fet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureLogic Level GateRds On (max) @ Id, Vgs8.8 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)40VCurrent - Continuous Drain (id) @ 25° C50A
Vgs(th) (max) @ Id2V @ 16µAGate Charge (qg) @ Vgs28nC @ 10V
Input Capacitance (ciss) @ Vds2100pF @ 20VPower - Max47W
Mounting TypeSurface MountMinimum Operating Temperature- 55 C
ConfigurationSingleTransistor PolarityN-Channel
Resistance Drain-source Rds (on)0.0088 Ohm @ 10 VDrain-source Breakdown Voltage40 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current50 A
Power Dissipation47000 mWMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTDrain Source Voltage Vds40V
On Resistance Rds(on)7.3mohmRds(on) Test Voltage Vgs10V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-252
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000354798  
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IPD088N04L G Summary of contents