SPD30N03S2L-20 G Infineon Technologies, SPD30N03S2L-20 G Datasheet

no-image

SPD30N03S2L-20 G

Manufacturer Part Number
SPD30N03S2L-20 G
Description
MOSFET N-CH 30V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of SPD30N03S2L-20 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
20 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 23µA
Gate Charge (qg) @ Vgs
19nC @ 10V
Input Capacitance (ciss) @ Vds
700pF @ 25V
Power - Max
60W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000443768
SPD30N03S2L-20G PG- TO252 -3
Type
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Excellent Gate Charge x R
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
° Pb-free lead plating; RoHS compliant
D
S
C
C
C
=30A, V
Superior thermal resistance
=30 A , V
=25°C
=25°C
=25°C
DS
DD
=-V, di/dt=200A/µs, T
® Power-Transistor
=25V, R
GS
Package
=25Ω
1)
j
= 25 °C, unless otherwise specified
DS(on)
jmax
=175°C
product (FOM)
Marking
2N03L20
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
SPD30N03S2L-20
±20
DS
120
DS(on)
30
30
70
60
6
6
PG- TO252 -3
02-09-2008
30
20
30
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
G

Related parts for SPD30N03S2L-20 G

SPD30N03S2L-20 G Summary of contents

Page 1

... Excellent Gate Charge x R • Superior thermal resistance • 175°C operating temperature • Avalanche rated • dv/dt rated ° Pb-free lead plating; RoHS compliant Type Package SPD30N03S2L-20G PG- TO252 -3 Maximum Ratings °C, unless otherwise specified j Parameter 1) Continuous drain current T =25°C ...

Page 2

... PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) = 2.5K/W the chip is able to carry I thJC Page 2 SPD30N03S2L-20 Values Unit min. typ. max. - 1.7 2.5 K 100 - - Values Unit min. typ. max ...

Page 3

... V =15V, V =10V, d(on =30A =12.7Ω d(off =24V, I =30A =24V, I =30A 10V GS V (plateau) V =24V, I =30A =25° =0V, I =30A =- /dt=100A/µ Page 3 SPD30N03S2L-20 Values Unit min. typ. max 530 700 pF - 200 275 - 1.7 2 4.9 7 120 - 1.1 1 02-09-2008 G ...

Page 4

... Safe operating area parameter : °C C SPD30N03S2L- Drain current parameter: V SPD30N03S2L- °C 190 Max. transient thermal impedance thJC parameter : K 35.0µ 100 µ Page 4 SPD30N03S2L-20 ) ≥ 100 120 140 160 ) SPD30N03S2L- 0.50 single pulse - 02-09-2008 G °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... 0.5 1 1.5 2 2.5 7 Typ. transfer characteristics ≥ parameter µ Typ. drain-source on resistance R DS(on) parameter Ω 3 4 7 Typ. forward transconductance g = f(I DS(on)max fs parameter 5 Page 5 SPD30N03S2L- SPD30N03S2L- [ 4.0 4.5 5.0 6.0 7.0 10 =25° 02-09-2008 ...

Page 6

... V parameter 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss C oss C 10 rss Page 6 SPD30N03S2L- 373µ 23µA 0 -60 - 100 ) µs p SPD30N03S2L- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 2 02-09-2008 G °C 180 2 ...

Page 7

... Typ. avalanche energy par 105 15 Drain-source breakdown voltage (BR)DSS j parameter SPD30N03S2L- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD30N03S2L-20 ) Gate = 30 A pulsed D SPD30N03S2L-20 0 max 0 max 02-09-2008 Gate ...

Page 8

... Package outline: PG-TO252-3 Page 8 G SPD30N03S2L-20 02-09-2008 ...

Page 9

... Page 9 SPD30N03S2L-20 G 02-09-2008 ...

Related keywords