BSC030N03MSG Infineon Technologies, BSC030N03MSG Datasheet

MOSFET N-CH 30V 100A TDSON-8

BSC030N03MSG

Manufacturer Part Number
BSC030N03MSG
Description
MOSFET N-CH 30V 100A TDSON-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSC030N03MSG

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
73nC @ 10V
Input Capacitance (ciss) @ Vds
5700pF @ 15V
Power - Max
69W
Mounting Type
Surface Mount
Package / Case
8-PowerTDFN
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSC030N03MSG+F30
BSC030N03MSG+F30INTR
BSC030N03MSG+F30INTR
BSC030N03MSGINTR
BSC030N03MSGXT
SP000311506

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSC030N03MSG
Manufacturer:
INFINEON
Quantity:
400
Part Number:
BSC030N03MSG
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.11
1)
Features
• Optimized for 5V driver application (Notebook, VGA, POL)
• Low FOM
• 100% avalanche tested
• N-channel
• Very low on-resistance RDS(on) @ V
• Excellent gate charge x RDS(on) product (FOM)
• Qualified according to JEDEC
• Superior thermal resistance
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche current, single pulse
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
OptiMOS
Type
BSC030N03MS G
J-STD20 and JESD22
SW
®
3 M-Series Power-MOSFET
for High Frequency SMPS
3)
j
Package
PG-TDSON-8
=25 °C, unless otherwise specified
1)
4)
for target applications
GS
Symbol Conditions
I
I
I
E
dv /dt
V
D
D,pulse
AS
AS
GS
=4.5V
Marking
030N03MS
V
V
V
V
T
V
R
T
T
I
I
di /dt =200 A/µs,
T
D
D
page 1
C
C
C
j,max
GS
GS
GS
GS
GS
thJA
=50 A, R
=50 A, V
=100 °C
=25 °C
=25 °C
=10 V, T
=10 V, T
=4.5 V, T
=4.5 V,
=4.5 V, T
=50 K/W
=150 °C
DS
GS
C
C
=24 V,
=25 Ω
C
A
2)
=25 °C
=100 °C
V
R
I
=25 °C
=25 °C,
Product Summary
D
DS
DS(on),max
V
V
GS
GS
=10 V
=4.5 V
Value
100
100
400
±16
77
69
21
50
75
PG-TDSON-8
6
BSC030N03MS G
100
3.8
30
3
Unit
A
mJ
kV/µs
V
V
mΩ
A
2007-10-29

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BSC030N03MSG Summary of contents

Page 1

OptiMOS ® 3 M-Series Power-MOSFET Features • Optimized for 5V driver application (Notebook, VGA, POL) • Low FOM for High Frequency SMPS SW • 100% avalanche tested • N-channel • Very low on-resistance RDS(on • Excellent gate charge ...

Page 2

Maximum ratings =25 °C, unless otherwise specified j Parameter Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Parameter Thermal characteristics Thermal resistance, junction - case Device on PCB Electrical characteristics Static characteristics ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate charge at threshold Gate to drain charge Switching charge Gate charge total ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state resistance ...

Page 5

Typ. output characteristics I =f =25 ° parameter 300 5 V 4.5 V 250 10 V 200 150 100 Typ. transfer characteristics I =f ...

Page 6

Drain-source on-state resistance =10 V DS(on -60 - Typ. capacitances C =f ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start) 100 10 125 ° Drain-source breakdown voltage V =f BR(DSS ...

Page 8

Package Outline PG-TDSON-8: Outline Footprint Dimensions in mm Rev. 1.11 PG-TDSON-8 page 8 BSC030N03MS G 2007-10-29 ...

Page 9

Package Outline PG-TDSON-8: Tape Dimensions in mm Rev. 1.11 page 9 BSC030N03MS G 2007-10-29 ...

Page 10

... Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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