2SK4078-ZK-AY Renesas Electronics America, 2SK4078-ZK-AY Datasheet
2SK4078-ZK-AY
Specifications of 2SK4078-ZK-AY
Related parts for 2SK4078-ZK-AY
2SK4078-ZK-AY Summary of contents
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To our customers, Old Company Name in Catalogs and Other Documents st On April 1 , 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the ...
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All information included in this document is current as of the date this document is issued. Such information, however, is subject to change without any prior notice. Before purchasing or using any Renesas Electronics products listed herein, please confirm ...
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... DESCRIPTION The 2SK4078 is N-channel MOS Field Effect Transistor designed for high current switching applications. ORDERING INFORMATION LEAD PLATING PART NUMBER Note 2SK4078-ZK-E1-AY Pure Sn (Tin) Note 2SK4078-ZK-E2-AY Note Pb-free (This product does not contain Pb in external electrode.) FEATURES • Low on-state resistance R = 8.5 mΩ ...
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... F(S- μ Q di/dt = 100 TEST CIRCUIT 2 SWITCHING TIME D.U. PG τ τ μ ≤ Duty Cycle 1% ch Data Sheet D18885EJ1V0DS 2SK4078 MIN. TYP. MAX. UNIT μ ±100 nA 1.5 2.0 2.5 V 7.0 S 6.3 8.5 mΩ 9.5 14.0 mΩ 2300 pF 360 pF 220 1 90 ...
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... TOTAL POWER DISSIPATION vs. CASE TEMPERATURE 150 175 0 25 100 100 Pulse Width - s Data Sheet D18885EJ1V0DS 2SK4078 50 75 100 125 150 175 - Case Temperature - ° 125°C/Wi th(ch-A) = 2.77°C/Wi th(ch-C) Single Pulse 100 1000 3 ...
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... FORWARD TRANSFER ADMITTANCE vs. DRAIN CURRENT 100 0.1 0.1 150 200 DRAIN TO SOURCE ON-STATE RESISTANCE vs. GATE TO SOURCE VOLTAGE 100 0 Data Sheet D18885EJ1V0DS 2SK4078 = −55°C ch 25°C 75°C 150° Pulsed Gate to Source Voltage - −55° 25°C 75°C 150° ...
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... MHz 10 200 0 Drain to Source Voltage - V DS DYNAMIC INPUT/OUTPUT CHARACTERISTICS 100 REVERSE RECOVERY TIME vs. DIODE FORWARD CURRENT 1000 100 10 di/dt = 100 A/μ 1.5 0 Diode Forward Current - A F Data Sheet D18885EJ1V0DS 2SK4078 C iss C oss C rss 1 10 100 Gate Charge - 100 5 ...
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... Remark Strong electric field, when exposed to this device, can cause destruction of the gate oxide and ultimately degrade the device operation. Steps must be taken to stop generation of static electricity as much as possible, and quickly dissipate it once, when it has occurred. 6 2.3±0.1 0.5±0.1 No Plating 0 to 0.25 0.5±0.1 1.0 Data Sheet D18885EJ1V0DS 2SK4078 ...
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... Draw-out side MARKING INFORMATION K4078 RECOMMENDED SOLDERING CONDITIONS The 2SK4078 should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, please contact an NEC Electronics sales representative. For technical information, see the following website. ...
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... NEC Electronics' willingness to support a given application. (Note) (1) "NEC Electronics" as used in this statement means NEC Electronics Corporation and also includes its majority-owned subsidiaries. (2) "NEC Electronics products" means any product developed or manufactured by or for NEC Electronics (as defined above). 2SK4078 Not all M8E 02. 11-1 ...