SPD30N03S2L-10 G Infineon Technologies, SPD30N03S2L-10 G Datasheet

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SPD30N03S2L-10 G

Manufacturer Part Number
SPD30N03S2L-10 G
Description
MOSFET N-CH 30V 30A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet
1.SPD30N03S2L-10_G.pdf (9 pages)

Specifications of SPD30N03S2L-10 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
10 mOhm @ 30A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 50µA
Gate Charge (qg) @ Vgs
41.8nC @ 10V
Input Capacitance (ciss) @ Vds
1550pF @ 25V
Power - Max
100W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000443918
SPD30N03S2L-10G PG-TO252-3
° Pb-free lead plating; RoHS compliant
OptiMOS
Feature
• N-Channel
• Enhancement mode
• Logic Level
• Low On-Resistance R
• Excellent Gate Charge x R
•
• 175°C operating temperature
• Avalanche rated
• dv/dt rated
Type
Maximum Ratings, at T
Parameter
Continuous drain current
T
Pulsed drain current
T
Avalanche energy, single pulse
I
Repetitive avalanche energy, limited by T
Reverse diode dv/dt
I
Gate source voltage
Power dissipation
T
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
D
S
C
C
C
Superior thermal resistance
=30A, V
=30 A , V
=25°C
=25°C
=25°C
DS
DD
=24V, di/dt=200A/µs, T
® Power-Transistor
=25V, R
GS
Package
=25Ω
DS(on)
1)
j
= 25 °C, unless otherwise specified
DS(on)
jmax
product (FOM)
=175°C
Marking
2N03L10
jmax
Page 1
2)
Symbol
I
I
E
E
dv/dt
V
P
T
D
D puls
AS
AR
GS
tot
j ,
T
stg
-55... +175
55/175/56
Product Summary
V
R
I
D
Value
DS
DS(on)
±20
120
150
100
30
30
10
6
SPD30N03S2L-10 G
PG-TO252-3
02-09-2008
30
10
30
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A

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SPD30N03S2L-10 G Summary of contents

Page 1

... Operating and storage temperature IEC climatic category; DIN IEC 68-1 product (FOM) DS(on) Marking 2N03L10 Symbol puls jmax dv/dt =175°C jmax tot Page 1 SPD30N03S2L-10 G Product Summary DS(on PG-TO252-3 Value 30 30 120 150 10 6 ±20 100 T -55... +175 stg 55/175/56 02-09-2008 mΩ ...

Page 2

... PCB is vertical without blown air. Symbol R thJC R thJA R thJA = 25 °C, unless otherwise specified j Symbol V (BR)DSS = GS(th) I DSS I GSS R DS(on) R DS(on) = 1.5K/W the chip is able to carry I thJC Page 2 SPD30N03S2L-10 G Values Unit min. typ. max 1.5 K 100 - - Values Unit min. typ. max ...

Page 3

... I =30A =5.4Ω d(off =24V, I =30A =24V, I =30A 10V GS V (plateau) V =24V, I =30A =25° =0V, I =30A =- /dt=100A/µ Page 3 SPD30N03S2L-10 G Values Unit min. typ. max. 23.8 47 1160 1550 pF - 450 600 - 120 175 - 6.1 9 3.7 4 10.9 16.3 - 31.4 41 120 - 0.9 1 ...

Page 4

... Safe operating area parameter : °C C SPD30N03S2L- Drain current parameter: V SPD30N03S2L- °C 190 Max. transient thermal impedance thJC parameter : K 10.0µ 100 µ Page 4 SPD30N03S2L- ≥ 100 120 140 160 ) SPD30N03S2L- 0.50 single pulse - 02-09-2008 °C 190 T C 0.20 0.10 0.05 0.02 0. ...

Page 5

... 0.5 1 1.5 2 2.5 7 Typ. transfer characteristics ≥ parameter µ 0.5 1 1.5 2 2.5 6 Typ. drain-source on resistance R DS(on) parameter Ω 3 5 Typ. forward transconductance g = f(I DS(on)max fs parameter 3 Page 5 SPD30N03S2L- SPD30N03S2L- [ 3.5 4.0 4.5 5.0 5 =25° 02-09-2008 ...

Page 6

... Typ. gate threshold voltage V GS(th) parameter: V 2.5 V 1.5 0.5 140 °C 100 200 Forward character. of reverse diode parameter iss C oss 10 C rss Page 6 SPD30N03S2L- 0,4mA 50µ -60 - 100 ) µs p SPD30N03S2L- °C typ 175 °C typ °C (98 175 °C (98 0.4 0.8 1.2 1.6 ...

Page 7

... Typ. avalanche energy par 160 mJ 120 100 105 15 Drain-source breakdown voltage (BR)DSS j parameter SPD30N03S2L- -60 - Typ. gate charge Ω parameter °C 125 145 185 T j °C 100 140 200 T j Page 7 SPD30N03S2L- Gate = 30 A pulsed D SPD30N03S2L-10 0 max 0 max 02-09-2008 Gate ...

Page 8

... Package outline: PG-TO252-3 Page 8 SPD30N03S2L-10 G 02-09-2008 ...

Page 9

... Page Page 9 SPD30N03S2L-10 G 02-09-2008 ...

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