AON6452

Manufacturer Part NumberAON6452
DescriptionMOSFET N-CH 100V 5X6DFN
ManufacturerAlpha & Omega Semiconductor Inc
SeriesSDMOS™
AON6452 datasheets

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Specifications of AON6452

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs25 mOhm @ 20A, 10VDrain To Source Voltage (vdss)100V
Current - Continuous Drain (id) @ 25° C26AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs34nC @ 10VInput Capacitance (ciss) @ Vds2200pF @ 50V
Power - Max35WMounting TypeSurface Mount
Package / Case8-VDFN Exposed PadLead Free Status / RoHS StatusLead free / RoHS Compliant
Other names785-1231-2  
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General Description
The AON6452L is fabricated with SDMOS
technology that combines excellent R
charge.The result is outstanding efficiency with controlled
switching behavior. This universal technology is well suited
for PWM, load switching and general purpose applications.
Fits SOIC8
footprint !
DFN5X6
Absolute Maximum Ratings T
=25°C unless otherwise noted
A
Parameter
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain
T
=25°C
C
G
Current
T
=100°C
C
C
Pulsed Drain Current
T
=25°C
Continuous Drain
A
Current
T
=70°C
A
C
Avalanche Current
Repetitive avalanche energy L=0.1mH
T
=25°C
C
B
Power Dissipation
T
=100°C
C
T
=25°C
A
A
Power Dissipation
T
=70°C
A
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
A
Maximum Junction-to-Ambient
A D
Maximum Junction-to-Ambient
Maximum Junction-to-Case
Rev0: February 2009
N-Channel SDMOS
Product Summary
V
TM
trench
DS
I
(at V
=10V)
with low gate
D
GS
DS(ON)
R
(at V
DS(ON)
R
(at V
DS(ON)
100% UIS Tested
100% R
Tested
g
Top View
Symbol
V
DS
V
GS
I
D
I
DM
I
DSM
I
AR
C
E
AR
P
D
P
DSM
T
, T
J
STG
Symbol
Typ
24
t ≤ 10s
R
θJA
53
Steady-State
R
2.7
Steady-State
θJC
www.aosmd.com
AON6452L
TM
Power Transistor
100V
26A
< 25mΩ
=10V)
GS
< 31mΩ
= 7V)
GS
D
G
S
Maximum
Units
V
100
V
±25
26
A
17
60
6.5
A
5.0
A
28
mJ
39
35
W
14
2
W
1.25
°C
-55 to 150
Max
Units
30
°C/W
64
°C/W
3.5
°C/W
Page 1 of 7

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AON6452 Summary of contents

  • Page 1

    ... General Description The AON6452L is fabricated with SDMOS technology that combines excellent R charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications. Fits SOIC8 footprint ! DFN5X6 Absolute Maximum Ratings T =25°C unless otherwise noted ...

  • Page 2

    ... Ratings are based on low frequency and duty cycles to keep initial J(MAX) and case to ambient. θJC 2 FR-4 board with 2oz. Copper still air environment with T www.aosmd.com AON6452L Min Typ Max Units 100 10 T =55° ...

  • Page 3

    ... V =10V GS 1.4 1 Figure 4: On-Resistance vs. Junction Temperature 1.0E+02 I =20A D 1.0E+01 1.0E+00 1.0E-01 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 1.0E-05 0 Figure 6: Body-Diode Characteristics (Note E) www.aosmd.com AON6452L V =5V DS 125°C 25° (Volts =10V GS I =20A =15A 100 125 150 175 Temperature (°C) (Note E) 125° ...

  • Page 4

    ... Figure 10: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse θJC 40 0.001 0.01 0.1 Pulse Width (s) www.aosmd.com AON6452L C iss oss C rss (Volts) DS Figure 8: Capacitance Characteristics T =150°C J(Max) T =25° ...

  • Page 5

    ... Figure 15: Single Pulse Power Rating Junction-to- In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.01 0.1 1 Pulse Width (s) www.aosmd.com AON6452L 50 75 100 125 150 T (°C) CASE T =25°C A 0.001 0.1 10 1000 Pulse Width (s) Ambient (Note G) ...

  • Page 6

    ... Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 25º 25º 800 1000 0 200 Figure 20: Diode Reverse Recovery Time and www.aosmd.com AON6452L 2 125ºC 1.6 1.2 25ºC 0.8 125ºC 0.4 25º ( =20A 4.5 s 125º 25ºC rr 2.5 2 1.5 125º ...

  • Page 7

    ... VDC - DUT Resistive Switching Test Circuit & Waveforms RL Vds + DUT Vdd VDC - Vgs d(on 1 Vds + Vgs Vdd VDC - Id Vgs Diode Recovery Test Circuit & Waveforms Idt Vgs Isd Vdd VDC - Vds www.aosmd.com AON6452L Qg Qgd Charge 90% 10 d(off) t off DSS dI/ Vdd Page ...

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