IPD50N06S2-14 Infineon Technologies, IPD50N06S2-14 Datasheet

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IPD50N06S2-14

Manufacturer Part Number
IPD50N06S2-14
Description
MOSFET N-CH 55V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD50N06S2-14

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
14.4 mOhm @ 32A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 80µA
Gate Charge (qg) @ Vgs
52nC @ 10V
Input Capacitance (ciss) @ Vds
1485pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
14.4 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
2.1 V
Continuous Drain Current
50 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000252171

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Rev. 1.1
OptiMOS
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD50N06S2-14
Green package (lead free)
®
Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
PN0614
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=50A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
(SMD version)
-55 ... +175
55/175/56
Value
50
200
240
±20
136
49
PG-TO252-3-11
1)
IPD50N06S2-14
14.4
50
55
2008-10-21
Unit
A
mJ
V
W
°C
V
m
A

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IPD50N06S2-14 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.1 Product Summary DS(on),max I D Marking PN0614 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =50A =25 °C tot stg page 1 IPD50N06S2- (SMD version) 14 PG-TO252-3-11 Value Unit 200 240 mJ ±20 V 136 W -55 ... +175 °C 55/175/56 2008-10-21 ...

Page 2

... R thJA R minimal footprint thJA cooling area =25 °C, unless otherwise specified (BR)DSS =80 µA GS(th = DSS T =25 ° = =125 ° = GSS = =32 A, DS(on page 2 IPD50N06S2-14 Values min. typ. max 1 100 - - 2.1 3 100 = 100 - 10.8 14.4 Unit K µA nA mΩ 2008-10-21 ...

Page 3

... PCB is vertical in still air. Rev. 1.1 Symbol Conditions C iss oss f =1 MHz C rss t d( d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ (one layer, 70 µm thick) copper area for drain page 3 IPD50N06S2-14 Values min. typ. max. - 1485 = 464 - 167 - = 5 Unit - 200 1 2008-10-21 ...

Page 4

... parameter 1000 100 Rev. 1.1 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPD50N06S2- ≥ 100 150 T [° 0.1 0.05 0.02 0.01 single pulse - [s] p 200 - 2008-10-21 ...

Page 5

... parameter 200 10 V 160 120 Typ. transfer characteristics parameter 100 175 °C 25 ° Rev. 1.1 6 Typ. drain-source on-state resistance DS(on) parameter 6 5 [V] 8 Typ. Forward transconductance parameter -55 ° [V] page 5 IPD50N06S2- ° 5 [ 25° [ 100 80 100 2008-10-21 ...

Page 6

... Typ. gate threshold voltage V = f(T GS(th) parameter 3.5 3 2.5 2 1.5 1 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss Coss 1 10 Crss [V] page 6 IPD50N06S2- 400 µA 80 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 1.6 ...

Page 7

... A 800 600 25 A 400 50 A 200 100 T [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.1 14 Typ. gate charge V = f(Q GS gate 125 150 175 0 16 Gate charge waveforms 100 140 180 page 7 IPD50N06S2- pulsed [nC] gate gate gate 2008-10-21 40 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 page 8 IPD50N06S2-14 2008-10-21 ...

Page 9

... Revision History Version Revision 1.1 Rev. 1.1 Date 20.10.2008 page 9 IPD50N06S2-14 Changes Correction of RthJC from 3.4K/W to 1.1K/W 2008-10-21 ...

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