IPD50N06S2L-13 Infineon Technologies, IPD50N06S2L-13 Datasheet

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IPD50N06S2L-13

Manufacturer Part Number
IPD50N06S2L-13
Description
MOSFET N-CH 55V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD50N06S2L-13

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12.7 mOhm @ 34A, 10V
Drain To Source Voltage (vdss)
55V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
2V @ 80µA
Gate Charge (qg) @ Vgs
69nC @ 10V
Input Capacitance (ciss) @ Vds
1800pF @ 25V
Power - Max
136W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12.7 m Ohms
Drain-source Breakdown Voltage
55 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
50 A
Power Dissipation
136 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000252172

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
IPD50N06S2L-13
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Part Number:
IPD50N06S2L-13
0
Rev. 1.0
OptiMOS
Features
• N-channel Logic Level - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Ultra low Rds(on)
• 100% Avalanche tested
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Type
IPD50N06S2L-13
Green package (lead free)
®
Power-Transistor
2)
Package
PG-TO252-3-11
j
=25 °C, unless otherwise specified
1)
Symbol
I
I
E
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
PN06L13
stg
T
T
V
T
I
T
D
C
C
C
C
GS
=50A
page 1
=25 °C, V
=100 °C,
=25 °C
=25 °C
=10 V
Conditions
2)
GS
Product Summary
V
R
I
D
=10 V
DS
DS(on),max
(SMD version)
-55 ... +175
55/175/56
Value
200
240
±20
136
50
50
PG-TO252-3-11
IPD50N06S2L-13
12.7
50
55
2006-07-18
Unit
A
mJ
V
W
°C
V
m
A

Related parts for IPD50N06S2L-13

IPD50N06S2L-13 Summary of contents

Page 1

... IEC climatic category; DIN IEC 68-1 Rev. 1.0 Product Summary DS(on),max I D Marking PN06L13 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =50A =25 °C tot stg page 1 IPD50N06S2L- (SMD version) 12 PG-TO252-3-11 Value Unit 200 240 mJ ±20 V 136 W -55 ... +175 °C 55/175/56 2006-07-18 ...

Page 2

... (BR)DSS =80 µA GS(th = DSS T =25 ° = =125 ° = GSS =4 =34 A DS(on = =34 A DS(on page 2 IPD50N06S2L-13 Values min. typ. max 1 100 - - 1.2 1 100 = 100 - 12.7 16.7 - 10.2 12.7 Unit K µ mΩ 2006-07-18 ...

Page 3

... PCB is vertical in still air. Rev. 1.0 Symbol Conditions C iss oss f =1 MHz C rss t d( d(off = = plateau =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ (one layer, 70 µm thick) copper area for drain page 3 IPD50N06S2L-13 Values min. typ. max. - 1800 = 508 - 172 - = 3 0 Unit - 200 1 2006-07-18 ...

Page 4

... parameter 1000 100 Rev. 1.0 2 Drain current 150 200 0 4 Max. transient thermal impedance Z = f(t thJC parameter µ µs 100 µ 100 [V] page 4 IPD50N06S2L- ≥ 100 150 T [° 0.1 0.05 0.02 0.01 single pulse - [s] p 200 - 2006-07-18 ...

Page 5

... parameter 200 160 120 Typ. transfer characteristics parameter 100 Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 3 2 [V] 8 Typ. Forward transconductance parameter: g 120 -55 °C 25 °C 175 °C 100 [V] page 5 IPD50N06S2L- ° 3 [ 25° [ 4 100 80 100 2006-07-18 ...

Page 6

... Typ. gate threshold voltage V = f(T GS(th) parameter: I 2.5 2 1.5 1 0.5 0 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss Coss 1 10 Crss [V] page 6 IPD50N06S2L- 400 µA 80 µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 1 ...

Page 7

... A 800 600 25 A 400 50 A 200 100 T [° Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate 125 150 175 0 16 Gate charge waveforms 100 140 180 page 7 IPD50N06S2L- pulsed [nC] gate gate gate 2006-07-18 60 ...

Page 8

... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 page 8 IPD50N06S2L-13 2006-07-18 ...

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