IPD088N06N3 G

Manufacturer Part NumberIPD088N06N3 G
DescriptionMOSFET N-CH 60V 50A TO252-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPD088N06N3 G datasheet
 


Specifications of IPD088N06N3 G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs8.8 mOhm @ 50A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C50AVgs(th) (max) @ Id4V @ 34µA
Gate Charge (qg) @ Vgs48nC @ 10VInput Capacitance (ciss) @ Vds3900pF @ 30V
Power - Max71WMounting TypeSurface Mount
Package / CaseDPak, TO-252 (2 leads+tab), SC-63Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000453620  
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IPD088N06N3 G Summary of contents