IPD088N06N3 G Infineon Technologies, IPD088N06N3 G Datasheet

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IPD088N06N3 G

Manufacturer Part Number
IPD088N06N3 G
Description
MOSFET N-CH 60V 50A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD088N06N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
8.8 mOhm @ 50A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
50A
Vgs(th) (max) @ Id
4V @ 34µA
Gate Charge (qg) @ Vgs
48nC @ 10V
Input Capacitance (ciss) @ Vds
3900pF @ 30V
Power - Max
71W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000453620

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IPD088N06N3 G Summary of contents

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