MOSFET N-CH 60V 30A D2PAK

NTB30N06LT4G

Manufacturer Part NumberNTB30N06LT4G
DescriptionMOSFET N-CH 60V 30A D2PAK
ManufacturerON Semiconductor
TypePower MOSFET
NTB30N06LT4G datasheet
 


Specifications of NTB30N06LT4G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs46 mOhm @ 15A, 5VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C30AVgs(th) (max) @ Id2V @ 250µA
Gate Charge (qg) @ Vgs32nC @ 5VInput Capacitance (ciss) @ Vds1150pF @ 25V
Power - Max88.2WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.046 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)21 SDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 15 VContinuous Drain Current30 A
Power Dissipation88200 mWMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Number Of Elements1PolarityN
Channel ModeEnhancementDrain-source On-res0.046Ohm
Drain-source On-volt60VGate-source Voltage (max)±15V
Operating Temp Range-55C to 175COperating Temperature ClassificationMilitary
MountingSurface MountPin Count2 +Tab
Package TypeD2PAKLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesNTB30N06LT4GOS  
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NTP30N06L, NTB30N06L
Power MOSFET
30 Amps, 60 Volts, Logic Level,
N−Channel TO−220 and D
Designed for low voltage, high speed switching applications in
power supplies, converters and power motor controls and bridge
circuits.
Features
Pb−Free Packages are Available
Typical Applications
Power Supplies
Converters
Power Motor Controls
Bridge Circuits
MAXIMUM RATINGS
(T
= 25°C unless otherwise noted)
J
Rating
Drain−to−Source Voltage
Drain−to−Gate Voltage (R
= 10 MW)
GS
Gate−to−Source Voltage
− Continuous
v10 ms)
− Non−Repetitive (t
p
Drain Current
− Continuous @ T
= 25°C
A
− Continuous @ T
= 100°C
A
v10 ms)
− Single Pulse (t
p
Total Power Dissipation @ T
= 25°C
A
Derate above 25°C
Operating and Storage Temperature Range
Single Pulse Drain−to−Source Avalanche
Energy − Starting T
= 25°C
J
(V
= 50 Vdc, V
= 5.0 Vdc, L = 0.3 mH
DD
GS
I
= 26 A, V
= 60 Vdc)
L(pk)
DS
Thermal Resistance, Junction−to−Case
Maximum Lead Temperature for Soldering
Purposes, 1/8 in from case for 10 seconds
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
© Semiconductor Components Industries, LLC, 2006
January, 2006 − Rev. 4
2
PAK
Symbol
Value
Unit
V
60
Vdc
DSS
V
60
Vdc
DGR
Vdc
"15
V
GS
"20
V
GS
I
30
Adc
D
I
15
D
I
90
Apk
DM
P
88.2
W
1
D
2
0.59
W/°C
°C
T
, T
−55 to
J
stg
+175
E
101
mJ
AS
°C/W
R
1.7
qJC
1
°C
T
260
L
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
1
http://onsemi.com
30 AMPERES, 60 VOLTS
R
= 46 mW
DS(on)
N−Channel
D
G
S
MARKING
DIAGRAMS
4
Drain
4
TO−220
NTx30N06LG
CASE 221A
AYWW
STYLE 5
1
3
Gate
Source
3
2
Drain
4
Drain
4
NTx
2
D
PAK
30N06LG
CASE 418B
2
AYWW
STYLE 2
3
2
1
3
Drain
Gate
Source
NTx30N06L = Device Code
x
= P or B
A
= Assembly Location
Y
= Year
WW
= Work Week
G
= Pb−Free Package
ORDERING INFORMATION
Publication Order Number:
NTP30N06L/D

NTB30N06LT4G Summary of contents

  • Page 1

    NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical ...

  • Page 2

    ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1) = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

  • Page 3

    5 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 0.08 ...

  • Page 4

    2400 2000 C iss 1600 1200 C rss 800 400 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation ...

  • Page 5

    ... Figure 14. Diode Reverse Recovery Waveform ORDERING INFORMATION Device NTP30N06L NTP30N06LG NTB30N06L NTB30N06LG NTB30N06LT4 NTB30N06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP30N06L, NTB30N06L P (pk DUTY CYCLE ...

  • Page 6

    NTP30N06L, NTB30N06L PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI −T− PLANE Y14.5M, ...

  • Page 7

    ... −T− SEATING PLANE 0.13 (0.005 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTP30N06L, NTB30N06L PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE SOLDERING FOOTPRINT* 8 ...

  • Page 8

    ... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTP30N06L, NTB30N06L N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi ...