NTB30N06LT4G ON Semiconductor, NTB30N06LT4G Datasheet

NTB30N06LT4G

Manufacturer Part Number

NTB30N06LT4G

Description

MOSFET N-CH 60V 30A D2PAK

Manufacturer

ON Semiconductor

Type

Power MOSFETr

Datasheet

1.NTB30N06LT4G.pdf (8 pages)

Specifications of NTB30N06LT4G

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

46 mOhm @ 15A, 5V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

30A

Vgs(th) (max) @ Id

2V @ 250µA

Gate Charge (qg) @ Vgs

32nC @ 5V

Input Capacitance (ciss) @ Vds

1150pF @ 25V

Power - Max

88.2W

Mounting Type

Surface Mount

Package / Case

D²Pak, TO-263 (2 leads + tab)

Configuration

Single

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.046 Ohm @ 5 V

Forward Transconductance Gfs (max / Min)

21 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 15 V

Continuous Drain Current

30 A

Power Dissipation

88200 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Minimum Operating Temperature

- 55 C

Number Of Elements

Polarity

Channel Mode

Enhancement

Drain-source On-res

0.046Ohm

Drain-source On-volt

60V

Gate-source Voltage (max)

±15V

Operating Temp Range

-55C to 175C

Operating Temperature Classification

Military

Mounting

Surface Mount

Pin Count

2 +Tab

Package Type

D2PAK

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

NTB30N06LT4GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB30N06LT4G

Manufacturer:

Quantity:

12 500

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

NTB30N06LT4G

Manufacturer:

ON SEMICONDUCTOR

Quantity:

30 000

Current page: 1 of 8
Download datasheet (76Kb)

NTP30N06L, NTB30N06L

Power MOSFET

30 Amps, 60 Volts, Logic Level,

N−Channel TO−220 and D

power supplies, converters and power motor controls and bridge

circuits.

Features

•

Typical Applications

•

Maximum ratings are those values beyond which device damage can occur.

Maximum ratings applied to the device are individual stress limit values (not

normal operating conditions) and are not valid simultaneously. If these limits are

exceeded, device functional operation is not implied, damage may occur and

reliability may be affected.

MAXIMUM RATINGS

January, 2006 − Rev. 4

Drain−to−Source Voltage

Drain−to−Gate Voltage (R

Gate−to−Source Voltage

Drain Current

Total Power Dissipation @ T

Derate above 25°C

Operating and Storage Temperature Range

Single Pulse Drain−to−Source Avalanche

Energy − Starting T

Thermal Resistance, Junction−to−Case

Maximum Lead Temperature for Soldering

Purposes, 1/8 in from case for 10 seconds

L(pk)

Designed for low voltage, high speed switching applications in

Pb−Free Packages are Available

Power Supplies

Converters

Power Motor Controls

Bridge Circuits

= 50 Vdc, V

= 26 A, V

− Continuous @ T

− Single Pulse (t

− Continuous

− Non−Repetitive (t

= 60 Vdc)

Rating

= 5.0 Vdc, L = 0.3 mH

= 25°C

= 25°C unless otherwise noted)

v10 ms)

= 10 MW)

= 25°C

= 100°C

= 25°C

v10 ms)

PAK

Symbol

DGR

, T

DSS

qJC

stg

−55 to

Value

+175

"15

"20

88.2

0.59

101

260

1.7

W/°C

°C/W

Unit

Vdc

Adc

Apk

°C

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

30 AMPERES, 60 VOLTS

NTx30N06L = Device Code

ORDERING INFORMATION

http://onsemi.com

DS(on)

CASE 221A

CASE 418B

STYLE 5

TO−220

STYLE 2

= P or B

= Assembly Location

= Year

= Work Week

= Pb−Free Package

PAK

Publication Order Number:

= 46 mW

N−Channel

Gate

DIAGRAMS

MARKING

NTx30N06LG

AYWW

NTx

30N06LG

AYWW

NTP30N06L/D

Drain

Source

Related parts for NTB30N06LT4G

NTB30N06LT4G Summary of contents

Page 1

NTP30N06L, NTB30N06L Power MOSFET 30 Amps, 60 Volts, Logic Level, N−Channel TO−220 and D Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits. Features • Pb−Free Packages are Available Typical ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (Note 1) = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Drain Current ( Vdc Vdc ...

Page 3

5 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 0.08 ...

Page 4

2400 2000 C iss 1600 1200 C rss 800 400 GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS) Figure 7. Capacitance Variation ...

Page 5

... Figure 14. Diode Reverse Recovery Waveform ORDERING INFORMATION Device NTP30N06L NTP30N06LG NTB30N06L NTB30N06LG NTB30N06LT4 NTB30N06LT4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. NTP30N06L, NTB30N06L P (pk DUTY CYCLE ...

Page 6

NTP30N06L, NTB30N06L PACKAGE DIMENSIONS TO−220 CASE 221A−09 ISSUE AA NOTES: SEATING 1. DIMENSIONING AND TOLERANCING PER ANSI −T− PLANE Y14.5M, ...

Page 7

... −T− SEATING PLANE 0.13 (0.005 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTP30N06L, NTB30N06L PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE SOLDERING FOOTPRINT* 8 ...

Page 8

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTP30N06L, NTB30N06L N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi ...

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