NTB30N06LT4G ON Semiconductor, NTB30N06LT4G Datasheet - Page 2

MOSFET N-CH 60V 30A D2PAK

NTB30N06LT4G

Manufacturer Part Number
NTB30N06LT4G
Description
MOSFET N-CH 60V 30A D2PAK
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheet

Specifications of NTB30N06LT4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
46 mOhm @ 15A, 5V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
2V @ 250µA
Gate Charge (qg) @ Vgs
32nC @ 5V
Input Capacitance (ciss) @ Vds
1150pF @ 25V
Power - Max
88.2W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.046 Ohm @ 5 V
Forward Transconductance Gfs (max / Min)
21 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 15 V
Continuous Drain Current
30 A
Power Dissipation
88200 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
0.046Ohm
Drain-source On-volt
60V
Gate-source Voltage (max)
±15V
Operating Temp Range
-55C to 175C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
2 +Tab
Package Type
D2PAK
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTB30N06LT4GOS

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB30N06LT4G
Manufacturer:
ON
Quantity:
12 500
Part Number:
NTB30N06LT4G
Manufacturer:
ON SEMICONDUCTOR
Quantity:
30 000
1. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
2. Switching characteristics are independent of operating junction temperatures.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS (Note 2)
SOURCE−DRAIN DIODE CHARACTERISTICS
Drain−to−Source Breakdown Voltage (Note 1)
Temperature Coefficient (Positive)
Zero Gate Voltage Drain Current
Gate−Body Leakage Current (V
Gate Threshold Voltage (Note 1)
Threshold Temperature Coefficient (Negative)
Static Drain−to−Source On−Resistance (Note 1)
Static Drain−to−Source On−Voltage (Note 1)
Forward Transconductance (Note 1) (V
Input Capacitance
Output Capacitance
Transfer Capacitance
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Gate Charge
Forward On−Voltage
Reverse Recovery Time
Reverse Recovery Stored Charge
(V
(V
(V
(V
(V
(V
(V
GS
DS
DS
DS
GS
GS
GS
= 0 Vdc, I
= 60 Vdc, V
= 60 Vdc, V
= V
= 5.0 Vdc, I
= 5.0 Vdc, I
= 5.0 Vdc, I
GS
, I
D
D
= 250 mAdc)
= 250 mAdc)
D
D
D
GS
GS
= 15 Adc)
= 30 Adc)
= 15 Adc, T
= 0 Vdc)
= 0 Vdc, T
Characteristic
GS
J
J
= 150°C)
= 150°C)
= ± 15 Vdc, V
(I
DS
(T
V
S
(I
GS
S
= 30 Adc, V
J
= 7.0 Vdc, I
= 25°C unless otherwise noted)
(V
= 30 Adc, V
(V
(V
= 5.0 Vdc, R
(I
dI
DS
V
S
DD
DS
S
GS
/dt = 100 A/ms) (Note 1)
= 30 Adc, V
DS
NTP30N06L, NTB30N06L
= 25 Vdc, V
= 30 Vdc, I
= 48 Vdc, I
= 5.0 Vdc) (Note 1)
= 0 Vdc)
f = 1.0 MHz)
GS
D
GS
= 15 Adc)
http://onsemi.com
= 0 Vdc, T
G
= 0 Vdc) (Note 1)
= 9.1 W) (Note 1)
GS
D
D
GS
= 30 Adc,
= 30 Adc,
= 0 Vdc,
= 0 Vdc,
2
J
= 150°C)
V
Symbol
R
V
V
(BR)DSS
t
t
I
I
C
Q
DS(on)
DS(on)
C
V
GS(th)
C
g
d(on)
d(off)
DSS
GSS
Q
Q
Q
t
t
t
FS
oss
t
t
rss
SD
RR
iss
rr
a
b
r
f
T
1
2
Min
1.0
60
0.082
71.8
1.06
15.6
1.01
1.03
Typ
810
260
200
1.7
4.8
1.3
3.9
69
38
21
80
10
62
16
10
50
32
17
±100
1150
Max
370
115
400
120
1.0
2.0
1.7
1.2
10
46
20
30
32
mV/°C
mV/°C
mhos
mAdc
nAdc
Unit
Vdc
Vdc
Vdc
Vdc
mW
nC
mC
pF
ns
ns

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