NTB30N06LT4G ON Semiconductor, NTB30N06LT4G Datasheet - Page 4

• Manufacturer Part Number: NTB30N06LT4G
• Description: MOSFET N-CH 60V 30A D2PAK
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of NTB30N06LT4G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 46 mOhm @ 15A, 5V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 2V @ 250µA
• Gate Charge (qg) @ Vgs: 32nC @ 5V
• Input Capacitance (ciss) @ Vds: 1150pF @ 25V
• Power - Max: 88.2W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.046 Ohm @ 5 V
• Forward Transconductance Gfs (max / Min): 21 S
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 15 V
• Continuous Drain Current: 30 A
• Power Dissipation: 88200 mW
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.046Ohm
• Drain-source On-volt: 60V
• Gate-source Voltage (max): ±15V
• Operating Temp Range: -55C to 175C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 2 +Tab
• Package Type: D2PAK
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTB30N06LT4GOS

1000
1000
100
0.1
1200
100
2800
2400
2000
1600
10
10
800
400
1
1
0.1
0
1
10
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE
T
T
SINGLE PULSE
Figure 9. Resistive Switching Time Variation
Figure 11. Maximum Rated Forward Biased
C
J
C
C
V
= 175°C
= 25°C
iss
rss
DS
V
t
t
DS
d(off)
d(on)
= 0 V
5
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
t
t
r
Figure 7. Capacitance Variation
f
V
R
Thermal Limit
Package Limit
GS
versus Gate Resistance
DS(on)
R
Safe Operating Area
0
G
1
, GATE RESISTANCE (W)
10 ms
V
V
Limit
GS
DS
1 ms
= 0 V
5
(VOLTS)
10
100 ms
10
C
10
C
rss
C
iss
10 ms
oss
15
NTP30N06L, NTB30N06L
V
I
V
D
DS
GS
= 30 A
T
J
= 30 V
= 5 V
dc
= 25°C
http://onsemi.com
20
100
100
25
4
120
100
32
24
16
80
60
40
20
6
5
4
3
2
1
0
8
0
0
0.6
0
25
Figure 12. Maximum Avalanche Energy versus
Drain−to−Source Voltage versus Total Charge
V
V
T
GS
Figure 10. Diode Forward Voltage versus
Q
J
GS
1
T
= 25°C
V
0.68
J
SD
= 0 V
50
, STARTING JUNCTION TEMPERATURE (°C)
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
Starting Junction Temperature
4
Figure 8. Gate−to−Source and
Q
g
0.76
, TOTAL GATE CHARGE (nC)
75
Q
8
T
Current
Q
0.84
2
100
12
0.92
125
I
D
16
I
T
D
= 26 A
150
J
1
= 30 A
= 25°C
1.08
175
20