IPP100N08N3 G

Manufacturer Part NumberIPP100N08N3 G
DescriptionMOSFET N-CH 80V 70A TO220-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPP100N08N3 G datasheet
 

Specifications of IPP100N08N3 G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs10 mOhm @ 46A, 10VDrain To Source Voltage (vdss)80V
Current - Continuous Drain (id) @ 25° C70AVgs(th) (max) @ Id3.5V @ 46µA
Gate Charge (qg) @ Vgs35nC @ 10VInput Capacitance (ciss) @ Vds2410pF @ 40V
Power - Max100WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000474188  
1
Page 1
2
Page 2
3
Page 3
4
Page 4
5
Page 5
6
Page 6
7
Page 7
8
Page 8
9
Page 9
10
Page 10
11
Page 1/11

Download datasheet (2Mb)Embed
Next
3 Power-Transistor
Features
R
Type
Package
Marking
Maximum ratings,
T
Parameter
IPP100N08N3 G IPI100N08N3 G
Product Summary
V
R
I
Symbol Conditions
I
T
T
I
T
E
I
R
V
P
T
T T
IPB097N08N3 G
Value
Unit

IPP100N08N3 G Summary of contents

  • Page 1

    ... Power-Transistor Features R Type Package Marking Maximum ratings, T Parameter IPP100N08N3 G IPI100N08N3 G Product Summary Symbol Conditions IPB097N08N3 G Value Unit ...

  • Page 2

    ... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPP100N08N3 G IPI100N08N3 G Symbol Conditions IPB097N08N3 G Values Unit min. typ. max. ...

  • Page 3

    ... Parameter Dynamic characteristics Reverse Diode IPP100N08N3 G IPI100N08N3 G Symbol Conditions IPB097N08N3 G Values Unit min. typ. max. ...

  • Page 4

    ... Power dissipation P T 120 100 T [° Safe operating area [ Drain current 150 200 0 4 Max. transient thermal impedance IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G 50 100 150 T [° [s] p 200 0 10 ...

  • Page 5

    ... Typ. output characteristics 280 240 200 160 120 [ Typ. transfer characteristics 180 150 120 [ Typ. drain-source on resistance Typ. forward transconductance 120 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 120 160 200 240 I [ 120 160 I [A] D 280 200 ...

  • Page 6

    ... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 100 140 180 -60 12 Forward characteristics of reverse diode IPP100N08N3 G IPI100N08N3 G IPB097N08N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

  • Page 7

    ... Avalanche characteristics 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 [nC] gate ate ...

  • Page 8

    ... PG-TO263-3 (D²-Pak) IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ...

  • Page 9

    ... PG-TO262-3 (I²-Pak) IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ...

  • Page 10

    ... PG-TO220-3 IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ...

  • Page 11

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPP100N08N3 G IPI100N08N3 G IPB097N08N3 G ...