IPP100N08N3 G Infineon Technologies, IPP100N08N3 G Datasheet - Page 3

• Manufacturer Part Number: IPP100N08N3 G
• Description: MOSFET N-CH 80V 70A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N08N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 10 mOhm @ 46A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 70A
• Vgs(th) (max) @ Id: 3.5V @ 46µA
• Gate Charge (qg) @ Vgs: 35nC @ 10V
• Input Capacitance (ciss) @ Vds: 2410pF @ 40V
• Power - Max: 100W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000474188

Parameter
Dynamic characteristics
Reverse Diode
Symbol Conditions
C
C
C
t
t
t
t
Q
Q
Q
Q
V
Q
I
I
V
t
Q
V
f
V
I
V
V
V
T
V
T
V
i
t
R
V
I
I
V
I
V
IPP100N08N3 G IPI100N08N3 G
min.
Values
typ.
IPB097N08N3 G
max.
Unit