IPD031N06L3 G Infineon Technologies, IPD031N06L3 G Datasheet - Page 3

Manufacturer Part Number

IPD031N06L3 G

Description

MOSFET N-CH 60V 100A TO252-3

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.IPD031N06L3_G.pdf (9 pages)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Logic Level Gate

Rds On (max) @ Id, Vgs

3.1 mOhm @ 100A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

2.2V @ 93µA

Gate Charge (qg) @ Vgs

79nC @ 4.5V

Input Capacitance (ciss) @ Vds

13000pF @ 30V

Power - Max

167W

Mounting Type

Surface Mount

Package / Case

DPak, TO-252 (2 leads+tab), SC-63

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

SP000451076