IPB034N06L3 G

Manufacturer Part NumberIPB034N06L3 G
DescriptionMOSFET N-CH 60V 90A TO263-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPB034N06L3 G datasheet
 


Specifications of IPB034N06L3 G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs3.4 mOhm @ 90A, 10VDrain To Source Voltage (vdss)60V
Current - Continuous Drain (id) @ 25° C90AVgs(th) (max) @ Id2.2V @ 93µA
Gate Charge (qg) @ Vgs79nC @ 4.5VInput Capacitance (ciss) @ Vds13000pF @ 30V
Power - Max167WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (2 leads + tab)Transistor PolarityN Channel
Drain Source Voltage Vds60VOn Resistance Rds(on)2.7mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max20V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-263
Rohs CompliantYesConfigurationSingle
Resistance Drain-source Rds (on)0.0034 OhmsDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current90 A
Power Dissipation167 WMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTMinimum Operating Temperature- 55 C
Lead Free Status / RoHS StatusLead free / RoHS CompliantOther namesSP000398062
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3 Power-Transistor
Features
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IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
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IPB034N06L3 G Summary of contents

  • Page 1

    ... Power-Transistor Features R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G Value Unit ...

  • Page 2

    ... Parameter Thermal characteristics Electrical characteristics, T Static characteristics IPB034N06L3 G Symbol Conditions IPI037N06L3 G IPP037N06L3 G Values Unit min. typ. max. ...

  • Page 3

    ... Parameter Dynamic characteristics Reverse Diode IPB034N06L3 G Symbol Conditions IPI037N06L3 G IPP037N06L3 G Values Unit min. typ. max. ...

  • Page 4

    ... Power dissipation P T 200 160 120 100 T [° Safe operating area [ Drain current 100 150 200 0 4 Max. transient thermal impedance IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 50 100 150 T [° [s] p 200 0 10 ...

  • Page 5

    ... Typ. output characteristics 320 240 160 [ Typ. transfer characteristics 320 240 160 [ Typ. drain-source on resistance Typ. forward transconductance 200 160 120 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 100 150 200 I [ 100 I [A] D 250 150 ...

  • Page 6

    ... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB034N06L3 G IPI037N06L3 G IPP037N06L3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

  • Page 7

    ... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G 50 100 Q [nC] gate 150 g ate ...

  • Page 8

    ... PG-TO-220-3 IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G ...

  • Page 9

    ... PG-TO-262-3 (I²-Pak) IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G ...

  • Page 10

    ... PG-TO-263 (D²-Pak) IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G ...

  • Page 11

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB034N06L3 G IPI037N06L3 G IPP037N06L3 G ...