IPB034N06L3 G Infineon Technologies, IPB034N06L3 G Datasheet - Page 9

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IPB034N06L3 G

Manufacturer Part Number
IPB034N06L3 G
Description
MOSFET N-CH 60V 90A TO263-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB034N06L3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
3.4 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
2.2V @ 93µA
Gate Charge (qg) @ Vgs
79nC @ 4.5V
Input Capacitance (ciss) @ Vds
13000pF @ 30V
Power - Max
167W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Transistor Polarity
N Channel
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2.7mohm
Rds(on) Test Voltage Vgs
10V
Voltage Vgs Max
20V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Configuration
Single
Resistance Drain-source Rds (on)
0.0034 Ohms
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
90 A
Power Dissipation
167 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000398062
IPB034N06L3 G
IPI037N06L3 G
IPP037N06L3 G
PG-TO-262-3 (I²-Pak)

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