IPD068N10N3 G Infineon Technologies, IPD068N10N3 G Datasheet - Page 2

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IPD068N10N3 G

Manufacturer Part Number
IPD068N10N3 G
Description
MOSFET N-CH 100V 90A TO252-3
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPD068N10N3 G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
6.8 mOhm @ 90A, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
90A
Vgs(th) (max) @ Id
3.5V @ 90µA
Gate Charge (qg) @ Vgs
68nC @ 10V
Input Capacitance (ciss) @ Vds
4910pF @ 50V
Power - Max
150W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000469892

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