IPB034N06N3 G Infineon Technologies, IPB034N06N3 G Datasheet

IPB034N06N3 G

Manufacturer Part Number

IPB034N06N3 G

Description

MOSFET N-CH 60V 100A TO263-7

Manufacturer

Infineon Technologies

Series

OptiMOS™r

Datasheet

1.IPB034N06N3_G.pdf (9 pages)

Specifications of IPB034N06N3 G

Package / Case

D²Pak, TO-263 (7 leads + tab)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

3.4 mOhm @ 100A, 10V

Drain To Source Voltage (vdss)

60V

Current - Continuous Drain (id) @ 25° C

100A

Vgs(th) (max) @ Id

4V @ 93µA

Gate Charge (qg) @ Vgs

130nC @ 10V

Input Capacitance (ciss) @ Vds

11000pF @ 30V

Power - Max

167W

Mounting Type

Surface Mount

Gate Charge Qg

130 nC

Minimum Operating Temperature

- 55 C

Configuration

Single Quint Source

Transistor Polarity

N-Channel

Resistance Drain-source Rds (on)

0.0034 Ohm @ 10 V

Forward Transconductance Gfs (max / Min)

135 S, 68 S

Drain-source Breakdown Voltage

60 V

Gate-source Breakdown Voltage

+/- 20 V

Continuous Drain Current

100 A

Power Dissipation

167000 mW

Maximum Operating Temperature

+ 175 C

Mounting Style

SMD/SMT

Drain Source Voltage Vds

60V

On Resistance Rds(on)

2.7mohm

Rds(on) Test Voltage Vgs

10V

Operating Temperature Range

-55Â°C To +175Â°C

Transistor Case Style

TO-263

Rohs Compliant

Yes

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Lead Free Status / RoHS Status

Lead free / RoHS Compliant, Lead free / RoHS Compliant

Other names

IPB034N06N3 G
IPB034N06N3 GTR
SP000397990

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Features

Maximum ratings,

Parameter

Type

Package

Marking

™

3 Power-Transistor

Symbol Conditions

T T

Product Summary

Value

IPB034N06N3 G

Unit

Related parts for IPB034N06N3 G

IPB034N06N3 G Summary of contents

Page 1

... Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB034N06N3 G Value Unit ...

Page 2

... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPB034N06N3 G Values Unit min. typ. max. ...

Page 3

... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPB034N06N3 G Values Unit min. typ. max. ...

Page 4

... Power dissipation P T 200 160 120 100 T [° Safe operating area [ Drain current 120 100 150 200 0 4 Max. transient thermal impedance 0.1 0. IPB034N06N3 G 50 100 150 T [° [s] p 200 0 10 ...

... Typ. output characteristics 320 240 160 [ Typ. transfer characteristics 320 240 160 [ Typ. drain-source on resistance Typ. forward transconductance 200 160 120 IPB034N06N3 100 I [ 100 I [A] D 150 150 ...

Page 6

... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB034N06N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

Page 7

... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB034N06N3 [nC] gate 100 g ate ...

Page 8

... PG-TO263-7 (D²-Pak 7pin) IPB034N06N3 G ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB034N06N3 G ...

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