IPB034N06N3 G

Manufacturer Part NumberIPB034N06N3 G
DescriptionMOSFET N-CH 60V 100A TO263-7
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPB034N06N3 G datasheet
 


Specifications of IPB034N06N3 G

Package / CaseD²Pak, TO-263 (7 leads + tab)Fet TypeMOSFET N-Channel, Metal Oxide
Fet FeatureStandardRds On (max) @ Id, Vgs3.4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)60VCurrent - Continuous Drain (id) @ 25° C100A
Vgs(th) (max) @ Id4V @ 93µAGate Charge (qg) @ Vgs130nC @ 10V
Input Capacitance (ciss) @ Vds11000pF @ 30VPower - Max167W
Mounting TypeSurface MountGate Charge Qg130 nC
Minimum Operating Temperature- 55 CConfigurationSingle Quint Source
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0034 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)135 S, 68 SDrain-source Breakdown Voltage60 V
Gate-source Breakdown Voltage+/- 20 VContinuous Drain Current100 A
Power Dissipation167000 mWMaximum Operating Temperature+ 175 C
Mounting StyleSMD/SMTDrain Source Voltage Vds60V
On Resistance Rds(on)2.7mohmRds(on) Test Voltage Vgs10V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-263
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesIPB034N06N3 G
IPB034N06N3 GTR
SP000397990
  
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3 Power-Transistor
Features
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Product Summary
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Symbol Conditions
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IPB034N06N3 G
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IPB034N06N3 G Summary of contents

  • Page 1

    ... Power-Transistor Features R R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB034N06N3 G Value Unit ...

  • Page 2

    ... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPB034N06N3 G Values Unit min. typ. max. ...

  • Page 3

    ... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPB034N06N3 G Values Unit min. typ. max. ...

  • Page 4

    ... Power dissipation P T 200 160 120 100 T [° Safe operating area [ Drain current 120 100 150 200 0 4 Max. transient thermal impedance 0.1 0. IPB034N06N3 G 50 100 150 T [° [s] p 200 0 10 ...

  • Page 5

    ... Typ. output characteristics 320 240 160 [ Typ. transfer characteristics 320 240 160 [ Typ. drain-source on resistance Typ. forward transconductance 200 160 120 IPB034N06N3 100 I [ 100 I [A] D 150 150 ...

  • Page 6

    ... Drain-source on-state resistance -60 - [° Typ. capacitances [ Typ. gate threshold voltage 3.5 3 2.5 2 1.5 1 0.5 0 100 140 180 -60 12 Forward characteristics of reverse diode IPB034N06N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

  • Page 7

    ... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB034N06N3 [nC] gate 100 g ate ...

  • Page 8

    ... PG-TO263-7 (D²-Pak 7pin) IPB034N06N3 G ...

  • Page 9

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB034N06N3 G ...