IPB034N06N3 G Infineon Technologies, IPB034N06N3 G Datasheet - Page 9

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IPB034N06N3 G

Manufacturer Part Number
IPB034N06N3 G
Description
MOSFET N-CH 60V 100A TO263-7
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of IPB034N06N3 G

Package / Case
D²Pak, TO-263 (7 leads + tab)
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
3.4 mOhm @ 100A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
100A
Vgs(th) (max) @ Id
4V @ 93µA
Gate Charge (qg) @ Vgs
130nC @ 10V
Input Capacitance (ciss) @ Vds
11000pF @ 30V
Power - Max
167W
Mounting Type
Surface Mount
Gate Charge Qg
130 nC
Minimum Operating Temperature
- 55 C
Configuration
Single Quint Source
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.0034 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
135 S, 68 S
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
100 A
Power Dissipation
167000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Drain Source Voltage Vds
60V
On Resistance Rds(on)
2.7mohm
Rds(on) Test Voltage Vgs
10V
Operating Temperature Range
-55°C To +175°C
Transistor Case Style
TO-263
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
IPB034N06N3 G
IPB034N06N3 GTR
SP000397990
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
Information
Warnings
IPB034N06N3 G

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