IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet
IPP100P03P3L-04
Specifications of IPP100P03P3L-04
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IPP100P03P3L-04 Summary of contents
Page 1
... Parameter 1) Continuous drain current 2) Pulsed drain current Avalanche energy, single pulse Gate source voltage Power dissipation Operating and storage temperature IEC climatic category; DIN IEC 68-1 Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 Product Summary DS(on),max I D PG-TO263-3-2 PG-TO262-3-1 Marking 3P03L04 3P03L04 ...
Page 2
... T =25° =-30V =125° =-16V, V GSS =-4.5V, I =-50A DS(on =-4.5V, I =-50A SMD version V =-10V, I =-80A =-10V, I =-80A SMD version page 2 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Values min. typ. max 0. - -1.5 -2.1 =0V, - -0.1 -1 =0V, - -10 -100 =0V - -10 -100 - 4.8 7.6 - 4.5 7.3 - 3.3 4 ...
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... S,pulse =0V, I =-80A =-15V, I =-50A /dt =100A/µ 0.65 K/W the chip is able to carry I thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 Values min. typ. max. - 7150 9300 - 2150 2800 - 1650 2500 - 200 - - 180 - - 25 33 ...
Page 4
... DS Rev. 1.1 2 Drain current I =f 120 100 150 200 4 Max. transient thermal impedance Z =f(t thJC parameter µs 10 µs 100 µ 100 10 [V] page 4 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L-04 ≤ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2007-09-25 ...
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... GS Rev. 1.1 6 Typ. drain-source on-state resistance R = f(I DS(on) parameter [V] 8 Typ. drain-source on-state resistance R = f(T DS(on) 5 175 °C 25 ° -60 [V] page 5 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- ° 100 120 140 160 180 - 100 T [° 140 180 2007-09-25 ...
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... SD Rev. 1.1 10 Typ. capacitances 4750µ 100 140 180 12 Typ. avalanche characteristics parameter: T 1000 100 1.2 1.4 1.6 1.8 [V] page 6 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- MHz GS Ciss Coss Crss [ j(start) 150° 100 t [µ 25°C 100°C 1000 2007-09-25 ...
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... A 400 200 125 T [° Typ. gate charge pulsed GS gate D parameter 100 Q gate Rev. 1.1 14 Drain-source breakdown voltage V BR(DSS 175 225 -60 16 Gate charge waveforms 150 200 [nC] page 7 IPB100P03P3L-04 IPI100P03P3L-04, IPP100P03P3L- 100 T [° 140 180 Q Q gate gate 2007-09-25 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 page 8 IPB100P03P3L-04 2007-09-25 ...
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... Revision History Version Rev 1.1 Rev. 1.1 IPI100P03P3L-04, IPP100P03P3L-04 Date 25.09.2007 page 9 IPB100P03P3L-04 Changes Type on page 1 changed from IP_100P06P3L-04 to IP_100P03PL 04 2007-09-25 ...