IPP100P03P3L-04

Manufacturer Part NumberIPP100P03P3L-04
DescriptionMOSFET P-CH 30V 100A TO220-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPP100P03P3L-04 datasheet
 

Specifications of IPP100P03P3L-04

Fet TypeMOSFET P-Channel, Metal OxideFet FeatureLogic Level Gate
Rds On (max) @ Id, Vgs4.3 mOhm @ 80A, 10VDrain To Source Voltage (vdss)30V
Current - Continuous Drain (id) @ 25° C100AVgs(th) (max) @ Id2.1V @ 475µA
Gate Charge (qg) @ Vgs200nC @ 10VInput Capacitance (ciss) @ Vds9300pF @ 25V
Power - Max200WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)Lead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000311114  
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9 Typ. gate threshold voltage
V
= f(T
); V
= V
GS(th)
j
GS
DS
parameter: I
D
2
1.75
1.5
475µA
1.25
1
0.75
0.5
0.25
0
-60
-20
20
60
T
[°C]
j
11 Typical forward diode characteristicis
IF = f(V
)
SD
parameter: T
j
3
10
2
10
25 °C
175 °C
1
10
0
10
0
0.2
0.4
0.6
0.8
-V
SD
Rev. 1.1
10 Typ. capacitances
C = f(V
DS
5
10
4750µA
4
10
3
10
100
140
180
12 Typ. avalanche characteristics
I
= f(t
AV
AV
parameter: T
1000
100
10
1
1
1.2
1.4
1.6
1.8
[V]
page 6
IPB100P03P3L-04
IPI100P03P3L-04, IPP100P03P3L-04
); V
= 0 V; f = 1 MHz
GS
Ciss
Coss
Crss
0
5
10
15
20
-V
[V]
DS
)
j(start)
150°C
1
10
100
t
[µs]
AV
25
30
25°C
100°C
1000
2007-09-25