IPP100P03P3L-04 Infineon Technologies, IPP100P03P3L-04 Datasheet - Page 7

• Manufacturer Part Number: IPP100P03P3L-04
• Description: MOSFET P-CH 30V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100P03P3L-04

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.3 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 2.1V @ 475µA
• Gate Charge (qg) @ Vgs: 200nC @ 10V
• Input Capacitance (ciss) @ Vds: 9300pF @ 25V
• Power - Max: 200W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000311114

Rev. 1.1
13 Typical avalanche energy
E
parameter: I
15 Typ. gate charge
V
parameter: V
AS
GS
2000
1800
1600
1400
1200
1000
= f(T
= f(Q
800
600
400
200
12
10
8
6
4
2
0
0
25
0
j
)
gate
20 A
80 A
40 A
D
); I
DD
D
= 80 A pulsed
50
75
Q
T
gate
100
125
j
[°C]
[nC]
8 V
150
175
32 V
200
225
page 7
14 Drain-source breakdown voltage
V
16 Gate charge waveforms
BR(DSS)
V
V
37
35
33
31
29
27
25
GS
GS
-60
= f(T
Q
Q
IPI100P03P3L-04, IPP100P03P3L-04
gs
gs
j
); I
-20
D
= 1 mA
Q
Q
20
g
g
T
Q
Q
j
60
gd
gd
[°C]
IPB100P03P3L-04
100
Q
Q
gate
gate
140
2007-09-25
180