MTB2P50ET4G ON Semiconductor, MTB2P50ET4G Datasheet - Page 3

• Manufacturer Part Number: MTB2P50ET4G
• Description: MOSFET P-CH 500V 2A D2PAK
• Manufacturer: ON Semiconductor

Specifications of MTB2P50ET4G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 6 Ohm @ 1A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 27nC @ 10V
• Input Capacitance (ciss) @ Vds: 1183pF @ 25V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (2 leads + tab)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

3.5
2.5
1.5
0.5
1.5
0.5
10
4
3
2
1
0
8
6
4
2
0
2
1
− 50
0
0
Figure 3. On−Resistance versus Drain Current
V
T
GS
Figure 5. On−Resistance Variation with
J
− 25
0.5
V
I
= 25°C
D
Figure 1. On−Region Characteristics
GS
4
= 10 V
= 1 A
V
= 10 V
DS
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1
T
0
J
, JUNCTION TEMPERATURE (°C)
8
I
D
, DRAIN CURRENT (AMPS)
and Temperature
1.5
25
Temperature
12
T
J
= 100°C
50
2
25°C
− 55°C
V
TYPICAL ELECTRICAL CHARACTERISTICS
16
GS
2.5
= 10 V
75
20
100
3
4 V
6 V
5 V
24
125
3.5
http://onsemi.com
8 V
7 V
MTB2P50E
150
28
4
3
1000
5.75
5.25
4.75
4.25
100
3.5
2.5
1.5
0.5
5.5
4.5
10
4
3
2
1
0
6
5
4
1
0
2
0
Figure 4. On−Resistance versus Drain Current
V
2.5
50
DS
V
0.5
T
GS
J
Figure 6. Drain−To−Source Leakage
≥ 10 V
Figure 2. Transfer Characteristics
= 25°C
= 0 V
V
V
100
DS
GS
3
, DRAIN−TO−SOURCE VOLTAGE (VOLTS)
, GATE−TO−SOURCE VOLTAGE (VOLTS)
1
Current versus Voltage
150 200
3.5
I
D
, DRAIN CURRENT (AMPS)
and Gate Voltage
V
1.5
GS
4
= 10 V
T
100°C
25°C
250
4.5
J
2
= 125°C
15 V
T
J
300
= − 55°C
5
2.5
350
5.5
3
400
6
3.5
100°C
25°C
450
6.5
500
7
4