NTB6411ANT4G ON Semiconductor, NTB6411ANT4G Datasheet
NTB6411ANT4G
Specifications of NTB6411ANT4G
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NTB6411ANT4G Summary of contents
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NTB6411AN, NTP6411AN N-Channel Power MOSFET 100 Features • Low R DS(on) • High Current Capability • 100% Avalanche Tested • These are Pb−Free Devices MAXIMUM RATINGS (T = 25°C Unless otherwise specified) J Parameter Drain−to−Source ...
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ELECTRICAL CHARACTERISTICS Characteristics OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage Drain−to−Source Breakdown Voltage Temper- ature Coefficient Zero Gate Voltage Drain Current Gate−to−Source Leakage Current ON CHARACTERISTICS (Note 2) Gate Threshold Voltage Negative Threshold Temperature Coefficient Drain−to−Source On−Resistance Forward Transconductance CHARGES, CAPACITANCES & ...
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T = 25° 140 7.5 V 120 100 DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 1. On−Region Characteristics 0.035 0.025 0.015 0.005 ...
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C iss 3000 2000 1000 C oss C rss DRAIN−TO−SOURCE VOLTAGE (V) DS Figure 7. Capacitance Variation 1000 ...
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... ORDERING INFORMATION Device NTB6411ANG NTB6411ANT4G NTP6411ANG †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. 0.001 0.01 0.1 t, PULSE TIME (s) Figure 13. Thermal Response ...
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... SEATING PLANE 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W 1 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. PACKAGE DIMENSIONS 2 D PAK 3 CASE 418B−04 ISSUE VIEW W−W VIEW W− ...
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... Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303− ...