NTB30N20T4G ON Semiconductor, NTB30N20T4G Datasheet

MOSFET N-CH 200V 30A D2PAK

NTB30N20T4G

Manufacturer Part Number
NTB30N20T4G
Description
MOSFET N-CH 200V 30A D2PAK
Manufacturer
ON Semiconductor
Datasheet

Specifications of NTB30N20T4G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
81 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
30A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
100nC @ 10V
Input Capacitance (ciss) @ Vds
2335pF @ 25V
Power - Max
2W
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.081 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
20 S
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
30 A
Power Dissipation
214000 mW
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NTB30N20T4GOS
NTB30N20T4GOS
NTB30N20T4GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
NTB30N20T4G
Manufacturer:
ON
Quantity:
1 600
Part Number:
NTB30N20T4G
Manufacturer:
ON
Quantity:
12 500
NTB30N20
Power MOSFET
30 Amps, 200 Volts
N−Channel Enhancement−Mode D
Features
Typical Applications
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. When surface mounted to an FR4 board using the minimum recommended
2. Pulse Test: Pulse Width = 10 ms, Duty Cycle = 2%.
MAXIMUM RATINGS
© Semiconductor Components Industries, LLC, 2005
August, 2005 − Rev. 4
Drain−to−Source Voltage
Drain−to−Source Voltage (R
Gate−to−Source Voltage
Drain Current
Total Power Dissipation @ T
Derate above 25°C
Total Power Dissipation @ T
Operating and Storage Temperature Range
Single Drain−to−Source Avalanche Energy,
Starting T
(V
I
Thermal Resistance
Maximum Lead Temperature for Soldering
Purposes for 10 seconds
L
Fast Recovery Diode
Source−to−Drain Diode Recovery Time Comparable to a Discrete
Avalanche Energy Specified
I
Mounting Information Provided for the D
Pb−Free Packages are Available
PWM Motor Controls
Power Supplies
Converters
(pk) = 20 A, L = 3.0 mH, R
pad size, (Cu Area 0.412 in
DD
DSS
= 100 Vdc, V
and R
J
− Continuous
− Non−Repetitive (t
= 25°C
DS(on)
− Junction−to−Case
− Junction−to−Ambient
− Junction−to−Ambient (Note 1)
− Continuous @ T
− Continuous @ T
− Pulsed (Note 2)
GS
Rating
Specified at Elevated Temperature
= 10 Vdc,
(T
C
= 25°C unless otherwise noted)
GS
G
A
A
2
p
= 25°C
= 25°C (Note 1)
= 25 W)
).
v10 ms)
= 1.0 MW)
A
A
100°C
25°C
2
PAK Package
Symbol
T
V
V
V
R
R
R
J
V
E
I
GSM
P
P
, T
DSS
DGR
T
I
I
DM
qJC
qJA
qJA
GS
AS
D
D
D
D
L
stg
−55 to
Value
+175
"30
"40
1.43
62.5
2
200
200
214
450
260
2.0
0.7
30
22
90
50
PAK
1
W/°C
°C/W
Unit
Vdc
Vdc
Vdc
Adc
mJ
°C
°C
W
W
NTB30N20
NTB30N20G
NTB30N20T4
NTB30N20T4G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
1
200 V
Device
V
CASE 418B
DSS
2
STYLE 2
D
3
30N20
A
Y
WW
G
ORDERING INFORMATION
2
PAK
G
http://onsemi.com
68 mW @ V
= Device Code
= Assembly Location
= Year
= Work Week
= Pb−Free Package
N−Channel
R
(Pb−Free)
(Pb−Free)
4
Package
D
D
D
D
DS(ON)
2
2
2
2
D
PAK
PAK
PAK
PAK
Publication Order Number:
MARKING DIAGRAM
& PIN ASSIGNMENT
GS
S
Gate
TYP
= 10 V
1
30N20G
AYWW
800 Tape & Reel
800 Tape & Reel
Drain
Drain
50 Units/Rail
50 Units/Rail
4
2
Shipping
NTB30N20/D
I
D
30 A
3
Source
MAX

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NTB30N20T4G Summary of contents

Page 1

... Device R 62.5 qJA 50 R NTB30N20 qJA °C NTB30N20G T 260 L NTB30N20T4 NTB30N20T4G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. 1 http://onsemi.com R TYP I MAX DSS DS(ON ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage = 250 mAdc Vdc Temperature Coefficient (Positive) Zero Gate Voltage Collector Current ( Vdc 200 Vdc 25° ...

Page 3

DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 1. On−Region Characteristics 0 ...

Page 4

Switching behavior is most easily modeled and predicted by recognizing that the power MOSFET is charge controlled. The lengths of various switching intervals (Dt) are determined by how fast the FET input capacitance can be charged by current from the ...

Page 5

TOTAL GATE CHARGE (nC) G Figure 8. Gate−To−Source and Drain−To−Source Voltage versus Total Charge DRAIN−TO−SOURCE DIODE CHARACTERISTICS 30 ...

Page 6

SINGLE PULSE T = 25°C C 100 LIMIT DS(on) THERMAL LIMIT PACKAGE LIMIT 0.1 0.1 1 DRAIN−TO−SOURCE VOLTAGE (VOLTS) DS Figure 11. Maximum Rated Forward Biased Safe Operating ...

Page 7

... PL 0.13 (0.005 VARIABLE CONFIGURATION ZONE VIEW W−W VIEW W−W 1 10.66 0.42 *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. NTB30N20 PACKAGE DIMENSIONS 2 D PAK CASE 418B−04 ISSUE ...

Page 8

... Fax: 480−829−7709 or 800−344−3867 Toll Free USA/Canada Email: orderlit@onsemi.com NTB30N20 N. American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 8 ON Semiconductor Website: http://onsemi ...

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