SPA16N50C3 Infineon Technologies, SPA16N50C3 Datasheet

MOSFET N-CH 560V 16A TO220FP

SPA16N50C3

Manufacturer Part Number
SPA16N50C3
Description
MOSFET N-CH 560V 16A TO220FP
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPA16N50C3

Package / Case
TO-220FP
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
280 mOhm @ 10A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
16A
Vgs(th) (max) @ Id
3.9V @ 675µA
Gate Charge (qg) @ Vgs
66nC @ 10V
Input Capacitance (ciss) @ Vds
1600pF @ 25V
Power - Max
34W
Mounting Type
Through Hole
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.28 Ohm @ 10 V
Drain-source Breakdown Voltage
560 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
16 A
Power Dissipation
34000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000216351
SPA16N50C3IN
SPA16N50C3X
SPA16N50C3XK
SPA16N50C3XTIN
SPA16N50C3XTIN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPA16N50C3
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Company:
Part Number:
SPA16N50C3
Quantity:
8 000
Rev. 3.2
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
• PG-TO-220-3-31;-3-111: Fully isolated package (2500 VAC; 1 minute)
Type
SPP16N50C3
SPI16N50C3
SPA16N50C3
Maximum Ratings
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
Reverse diode dv/dt
D
D
C
C
=8, V
=16A, V
= 25 °C
= 100 °C
DD
DD
=50V
=50V
T
PG-TO220FP
Package
PG-TO220
PG-TO262
C
6)
= 25°C
p
limited by T
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4583
Q67040-S4582
SP000216351
p age 1
jmax
j ma x
2)
PG-TO220FP
P-TO220-3-31
dv/dt
Symbol
I
I
E
E
I
V
V
P
T
D
D puls
AR
j ,
AS
AR
GS
GS
tot
Marking
16N50C3
16N50C3
16N50C3
T
stg
SPI16N50C3, SPA16N50C3
1
2
3
V
PG-TO262
SPP_I
DS
R
0.64
460
±20
± 30
160
DS(on)
16
10
48
16
@ T
I
D
-55...+150
Value
jmax
15
SPP16N50C3
P-TO220-3-1
SPA
0.64
16
10
PG-TO220
460
±20
± 30
2009-12-22
2
48
16
34
0.28
560
16
1)
1)
Unit
A
A
mJ
A
V
W
°C
V/ns
V
A
1
2 3

Related parts for SPA16N50C3

SPA16N50C3 Summary of contents

Page 1

... Reverse diode dv/dt Rev. 3.2 PG-TO220FP P-TO220-3-31 Ordering Code Q67040-S4583 Q67040-S4582 SP000216351 Symbol puls jmax limited jmax limited tot dv/dt p age 1 SPP16N50C3 SPI16N50C3, SPA16N50C3 @ T 560 V DS jmax R 0.28 DS(on PG-TO262 PG-TO220 P-TO220-3-1 Marking 16N50C3 16N50C3 16N50C3 Value SPP_I SPA 460 460 0.64 0.64 ...

Page 2

... Electrical Characteristics =25°C unless otherwise specified Parameter Drain-source breakdown voltage V Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance R Gate input resistance Rev. 3.2 SPI16N50C3, SPA16N50C3 Symbol Symbol R thJC R thJC_FP R thJA R thJA FP ...

Page 3

... d(off =380V, I =16A =380V, I =16A 10V =380V, I =16A V D (plateau) DD =400V, V < <T peak BR, DSS j j,max p age 3 SPP16N50C3 SPI16N50C3, SPA16N50C3 Values min. typ. max 1600 - 800 - 124 - 10 =0/10V * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...

Page 4

... Unit Symbol SPA 0.012 K/W C th1 0.023 C th2 0.043 C th3 0.176 C th4 0.371 C th5 2.522 C th6 th1 th th1 th2 th,n p age 4 SPP16N50C3 SPI16N50C3, SPA16N50C3 Values min. typ 420 = 1100 Value SPP_I SPA 0.0002495 0.0002495 0.0009406 0.0009406 0.001298 0.001298 0.00362 0.00362 0.009484 ...

Page 5

... C SPP16N50C3 170 W 140 120 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. 3.2 2 Power dissipation FullPAK tot 100 120 °C 160 Safe operating area FullPAK parameter age 5 SPP16N50C3 SPI16N50C3, SPA16N50C3 ) 100 120 ) DS = 25° 0.001 0. 0 2009-12-22 °C 160 ...

Page 6

... Typ. output characteristic =25° parameter µ Rev. 3.2 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 single pulse - Typ. output characteristic I D parameter 20V 7V 6.5V 6V 5. age 6 SPP16N50C3 SPI16N50C3, SPA16N50C3 = 0.01 single pulse - =150° µ 20V ...

Page 7

... DS D parameter µ Rev. 3.2 10 Drain-source on-state resistance R DS(on) parameter : 20V Typ. gate charge DS(on)max GS parameter 25° 150° age 7 SPP16N50C3 SPI16N50C3, SPA16N50C3 = SPP16N50C3 1.6 Ω 1.2 1 0.8 0.6 0.4 98% typ 0.2 0 -60 - 100 = Gate = 16 A pulsed D SPP16N50C3 0 max °C 180 T j ...

Page 8

... 0.5 mJ 0.3 0.2 0 Rev. 3.2 14 Avalanche SOA I AR par.: T 1 Drain-source breakdown voltage V (BR)DSS 100 120 °C 160 age 8 SPP16N50C3 SPI16N50C3, SPA16N50C3 = ≤ 150 ° j(start) = 25° j(start) = 125° SPP16N50C3 600 V 570 560 550 540 530 520 510 ...

Page 9

... W 350 300 250 200 150 100 Typ. C stored energy oss E =f(V ) oss DS 9 µ 100 200 Rev. 3.2 18 Typ. capacitances parameter 300 V 500 age 9 SPP16N50C3 SPI16N50C3, SPA16N50C3 ) DS =0V, f=1 MHz Ciss Coss 1 10 Crss 100 200 300 V 500 V DS 2009-12-22 ...

Page 10

... Definition of diodes switching characteristics Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 10 SPP16N50C3 2009-12-22 ...

Page 11

... PG-TO220-3-1, PG-TO220-3-21 Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 11 SPP16N50C3 2009-12-22 ...

Page 12

... PG-TO220-3 (Fully isolated) Dimensions in mm/ inches Rev. 3.2 SPP16N50C3 SPI16N50C3, SPA16N50C3 24 page 12 2009-12-20 ...

Page 13

... PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 13 SPP16N50C3 2009-12-22 ...

Page 14

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.2 SPI16N50C3, SPA16N50C3 page 14 SPP16N50C3 2009-12-22 ...

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