SPA16N50C3 Infineon Technologies, SPA16N50C3 Datasheet
SPA16N50C3
Specifications of SPA16N50C3
SPA16N50C3IN
SPA16N50C3X
SPA16N50C3XK
SPA16N50C3XTIN
SPA16N50C3XTIN
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SPA16N50C3 Summary of contents
Page 1
... Reverse diode dv/dt Rev. 3.2 PG-TO220FP P-TO220-3-31 Ordering Code Q67040-S4583 Q67040-S4582 SP000216351 Symbol puls jmax limited jmax limited tot dv/dt p age 1 SPP16N50C3 SPI16N50C3, SPA16N50C3 @ T 560 V DS jmax R 0.28 DS(on PG-TO262 PG-TO220 P-TO220-3-1 Marking 16N50C3 16N50C3 16N50C3 Value SPP_I SPA 460 460 0.64 0.64 ...
Page 2
... Electrical Characteristics =25°C unless otherwise specified Parameter Drain-source breakdown voltage V Drain-Source avalanche breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state resistance R Gate input resistance Rev. 3.2 SPI16N50C3, SPA16N50C3 Symbol Symbol R thJC R thJC_FP R thJA R thJA FP ...
Page 3
... d(off =380V, I =16A =380V, I =16A 10V =380V, I =16A V D (plateau) DD =400V, V < <T peak BR, DSS j j,max p age 3 SPP16N50C3 SPI16N50C3, SPA16N50C3 Values min. typ. max 1600 - 800 - 124 - 10 =0/10V * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V ...
Page 4
... Unit Symbol SPA 0.012 K/W C th1 0.023 C th2 0.043 C th3 0.176 C th4 0.371 C th5 2.522 C th6 th1 th th1 th2 th,n p age 4 SPP16N50C3 SPI16N50C3, SPA16N50C3 Values min. typ 420 = 1100 Value SPP_I SPA 0.0002495 0.0002495 0.0009406 0.0009406 0.001298 0.001298 0.00362 0.00362 0.009484 ...
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... C SPP16N50C3 170 W 140 120 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. 3.2 2 Power dissipation FullPAK tot 100 120 °C 160 Safe operating area FullPAK parameter age 5 SPP16N50C3 SPI16N50C3, SPA16N50C3 ) 100 120 ) DS = 25° 0.001 0. 0 2009-12-22 °C 160 ...
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... Typ. output characteristic =25° parameter µ Rev. 3.2 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 single pulse - Typ. output characteristic I D parameter 20V 7V 6.5V 6V 5. age 6 SPP16N50C3 SPI16N50C3, SPA16N50C3 = 0.01 single pulse - =150° µ 20V ...
Page 7
... DS D parameter µ Rev. 3.2 10 Drain-source on-state resistance R DS(on) parameter : 20V Typ. gate charge DS(on)max GS parameter 25° 150° age 7 SPP16N50C3 SPI16N50C3, SPA16N50C3 = SPP16N50C3 1.6 Ω 1.2 1 0.8 0.6 0.4 98% typ 0.2 0 -60 - 100 = Gate = 16 A pulsed D SPP16N50C3 0 max °C 180 T j ...
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... 0.5 mJ 0.3 0.2 0 Rev. 3.2 14 Avalanche SOA I AR par.: T 1 Drain-source breakdown voltage V (BR)DSS 100 120 °C 160 age 8 SPP16N50C3 SPI16N50C3, SPA16N50C3 = ≤ 150 ° j(start) = 25° j(start) = 125° SPP16N50C3 600 V 570 560 550 540 530 520 510 ...
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... W 350 300 250 200 150 100 Typ. C stored energy oss E =f(V ) oss DS 9 µ 100 200 Rev. 3.2 18 Typ. capacitances parameter 300 V 500 age 9 SPP16N50C3 SPI16N50C3, SPA16N50C3 ) DS =0V, f=1 MHz Ciss Coss 1 10 Crss 100 200 300 V 500 V DS 2009-12-22 ...
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... Definition of diodes switching characteristics Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 10 SPP16N50C3 2009-12-22 ...
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... PG-TO220-3-1, PG-TO220-3-21 Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 11 SPP16N50C3 2009-12-22 ...
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... PG-TO220-3 (Fully isolated) Dimensions in mm/ inches Rev. 3.2 SPP16N50C3 SPI16N50C3, SPA16N50C3 24 page 12 2009-12-20 ...
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... PG-TO262-3-1, PG-TO262-3-21 (I²-PAK) Rev. 3.2 SPI16N50C3, SPA16N50C3 p age 13 SPP16N50C3 2009-12-22 ...
Page 14
... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 3.2 SPI16N50C3, SPA16N50C3 page 14 SPP16N50C3 2009-12-22 ...