IPP100N06S2-05 Infineon Technologies, IPP100N06S2-05 Datasheet - Page 2

• Manufacturer Part Number: IPP100N06S2-05
• Description: MOSFET N-CH 55V 100A TO220-3
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPP100N06S2-05

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 5 mOhm @ 80A, 10V
• Drain To Source Voltage (vdss): 55V
• Current - Continuous Drain (id) @ 25° C: 100A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 170nC @ 10V
• Input Capacitance (ciss) @ Vds: 5110pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 5 m Ohms
• Drain-source Breakdown Voltage: 55 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 100 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: SP000218872

Rev. 1.0
Parameter
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction -
ambient, leaded
SMD version, device on PCB
Electrical characteristics, at T
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
2)
j
=25 °C, unless otherwise specified
Symbol
R
R
R
V
V
I
I
R
DSS
GSS
DS(on)
(BR)DSS
GS(th)
thJC
thJA
thJA
minimal footprint
6 cm
V
V
V
T
V
T
V
V
V
SMD version
j
j
GS
DS
DS
DS
GS
GS
GS
=25 °C
=125 °C
page 2
=V
=55 V, V
=55 V, V
=0 V, I
=20 V, V
=10 V, I
=10 V, I
2
Conditions
cooling area
GS
, I
2)
D
D
= 1 mA
D
D
=250 µA
GS
GS
DS
=80 A
=80 A,
=0 V,
=0 V,
=0 V
5)
min.
2.1
55
-
-
-
-
-
-
-
-
-
Values
0.01
typ.
3.0
4.0
3.7
1
1
-
-
-
-
-
IPB100N06S2-05
IPP100N06S2-05
max.
100
100
0.5
4.0
5.0
4.7
62
62
40
1
-
2006-03-13
Unit
K/W
V
µA
nA
mΩ