IPP100N08S2-07 Infineon Technologies, IPP100N08S2-07 Datasheet
IPP100N08S2-07
Specifications of IPP100N08S2-07
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IPP100N08S2-07 Summary of contents
Page 1
... SP0002-19044 SP0002-19005 SP0002-19041 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =25 °C tot stg page 1 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 DS (SMD version) DS(on),max D PG-TO262-3-1 Marking PN0807 PN0807 PN0807 Value =10 V 100 94 400 810 ±20 300 -55 ... +175 55/175/ 6.8 m 100 A Unit °C 2006-03-03 ...
Page 2
... (BR)DSS =250 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A, DS( SMD version page 2 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 Values min. typ. max 0 2.1 3 100 = 100 - 5.8 7.1 - 5.5 6.8 Unit K µA nA mΩ 2006-03-03 ...
Page 3
... S T =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ 0.5K/W the chip is able to carry 133A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 Values min. typ. max. - 4700 = 1260 - 580 - = 144 - 5 0 290 ...
Page 4
... V DS Rev. 1.0 2 Drain current 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2006-03-03 ...
Page 5
... V GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 5 4 [V] 8 Typ. Forward transconductance parameter: g 150 125 100 [V] page 5 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2- ° 5 [ 25° 100 150 I [ 100 120 200 2006-03-03 ...
Page 6
... GS(th) parameter 3.5 3 2.5 2 1.5 1 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss 2 10 Coss Crss [V] page 6 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2- 1250µA 250µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 2006-03-03 ...
Page 7
... Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate parameter 150 200 0 16 Gate charge waveforms 100 140 180 page 7 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2- 100A pulsed D DD 15V 40 80 120 Q [nC] gate gate gate 2006-03-03 60V 160 ...
Page 8
... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPP100N08S2-07, IPI100N08S2-07 page 8 IPB100N08S2-07 2006-03-03 ...