IPP100N08S2-07

Manufacturer Part NumberIPP100N08S2-07
DescriptionMOSFET N-CH 75V 100A TO220-3
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPP100N08S2-07 datasheet
 

Specifications of IPP100N08S2-07

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs7.1 mOhm @ 80A, 10VDrain To Source Voltage (vdss)75V
Current - Continuous Drain (id) @ 25° C100AVgs(th) (max) @ Id4V @ 250µA
Gate Charge (qg) @ Vgs200nC @ 10VInput Capacitance (ciss) @ Vds4700pF @ 25V
Power - Max300WMounting TypeThrough Hole
Package / CaseTO-220-3 (Straight Leads)ConfigurationSingle
Transistor PolarityN-ChannelResistance Drain-source Rds (on)0.0071 Ohms
Drain-source Breakdown Voltage75 VGate-source Breakdown Voltage+/- 20 V
Continuous Drain Current100 APower Dissipation300 W
Maximum Operating Temperature+ 175 CMounting StyleThrough Hole
Minimum Operating Temperature- 55 CLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000219005  
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OptiMOS
®
Power-Transistor
Features
• N-channel - Enhancement mode
• Automotive AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
Green package (lead free)
• Ultra low Rds(on)
• 100% Avalanche tested
Type
Package
IPB100N08S2-07
PG-TO263-3-2
IPP100N08S2-07
PG-TO220-3-1
IPI100N08S2-07
PG-TO262-3-1
Maximum ratings, at T
=25 °C, unless otherwise specified
j
Parameter
1)
Continuous drain current
2)
Pulsed drain current
Avalanche energy, single pulse
4)
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
Rev. 1.0
Product Summary
V
R
I
PG-TO263-3-2
PG-TO220-3-1
Ordering Code
SP0002-19044
SP0002-19005
SP0002-19041
Symbol
Conditions
I
T
=25 °C, V
D
C
GS
T
=100 °C,
C
2)
V
=10 V
GS
I
T
=25 °C
D,pulse
C
2)
E
I
= 80 A
AS
D
V
GS
P
T
=25 °C
tot
C
T
, T
j
stg
page 1
IPB100N08S2-07
IPP100N08S2-07, IPI100N08S2-07
DS
(SMD version)
DS(on),max
D
PG-TO262-3-1
Marking
PN0807
PN0807
PN0807
Value
=10 V
100
94
400
810
±20
300
-55 ... +175
55/175/56
75
V
6.8
m
100
A
Unit
A
mJ
V
W
°C
2006-03-03

IPP100N08S2-07 Summary of contents

  • Page 1

    ... SP0002-19044 SP0002-19005 SP0002-19041 Symbol Conditions I T =25 ° =100 ° = =25 °C D,pulse =25 °C tot stg page 1 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 DS (SMD version) DS(on),max D PG-TO262-3-1 Marking PN0807 PN0807 PN0807 Value =10 V 100 94 400 810 ±20 300 -55 ... +175 55/175/ 6.8 m 100 A Unit °C 2006-03-03 ...

  • Page 2

    ... (BR)DSS =250 µA GS(th = DSS T =25 ° = =125 ° = GSS = =80 A, DS( SMD version page 2 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 Values min. typ. max 0 2.1 3 100 = 100 - 5.8 7.1 - 5.5 6.8 Unit K µA nA mΩ 2006-03-03 ...

  • Page 3

    ... S T =25 ° S,pulse = =25 ° = /dt =100 A/µ = /dt =100 A/µ 0.5K/W the chip is able to carry 133A at 25°C. For detailed thJC 2 (one layer, 70 µm thick) copper area for drain page 3 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2-07 Values min. typ. max. - 4700 = 1260 - 580 - = 144 - 5 0 290 ...

  • Page 4

    ... V DS Rev. 1.0 2 Drain current 120 100 150 200 4 Max. transient thermal impedance Z = f(t thJC parameter µs 10 µ 100 µ 100 [V] page 4 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2- ≥ 100 150 T [° 0.5 0.1 0.05 0.01 single pulse - [s] p 200 - 2006-03-03 ...

  • Page 5

    ... V GS Rev. 1.0 6 Typ. drain-source on-state resistance DS(on) parameter 5 4 [V] 8 Typ. Forward transconductance parameter: g 150 125 100 [V] page 5 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2- ° 5 [ 25° 100 150 I [ 100 120 200 2006-03-03 ...

  • Page 6

    ... GS(th) parameter 3.5 3 2.5 2 1.5 1 100 140 180 12 Typical forward diode characteristicis IF = f(V SD parameter Ciss 2 10 Coss Crss [V] page 6 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2- 1250µA 250µA -60 - 100 T [° °C 175 °C 0 0.2 0.4 0.6 0 [V] SD 140 180 1.2 1.4 2006-03-03 ...

  • Page 7

    ... Typ. drain-source breakdown voltage BR(DSS -60 - [°C] j Rev. 1.0 14 Typ. gate charge V = f(Q GS gate parameter 150 200 0 16 Gate charge waveforms 100 140 180 page 7 IPB100N08S2-07 IPP100N08S2-07, IPI100N08S2- 100A pulsed D DD 15V 40 80 120 Q [nC] gate gate gate 2006-03-03 60V 160 ...

  • Page 8

    ... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 1.0 IPP100N08S2-07, IPI100N08S2-07 page 8 IPB100N08S2-07 2006-03-03 ...