IPB030N08N3 G

Manufacturer Part NumberIPB030N08N3 G
DescriptionMOSFET N-CH 80V 160A TO263-7
ManufacturerInfineon Technologies
SeriesOptiMOS™
IPB030N08N3 G datasheet
 


Specifications of IPB030N08N3 G

Fet TypeMOSFET N-Channel, Metal OxideFet FeatureStandard
Rds On (max) @ Id, Vgs3 mOhm @ 100A, 10VDrain To Source Voltage (vdss)80V
Current - Continuous Drain (id) @ 25° C160AVgs(th) (max) @ Id3.5V @ 155µA
Gate Charge (qg) @ Vgs117nC @ 10VInput Capacitance (ciss) @ Vds8110pF @ 40V
Power - Max214WMounting TypeSurface Mount
Package / CaseD²Pak, TO-263 (7 leads + tab)Transistor PolarityN Channel
Drain Source Voltage Vds80VOn Resistance Rds(on)2.5mohm
Rds(on) Test Voltage Vgs10VVoltage Vgs Max20V
Operating Temperature Range-55°C To +175°CTransistor Case StyleTO-263
Rohs CompliantYesLead Free Status / RoHS StatusLead free / RoHS Compliant
Other namesSP000444100  
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3 Power-Transistor
Features
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Type
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Maximum ratings,
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Product Summary
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Symbol Conditions
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IPB030N08N3 G
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IPB030N08N3 G Summary of contents

  • Page 1

    ... Power-Transistor Features R Type Package Marking Maximum ratings, T Parameter Product Summary Symbol Conditions IPB030N08N3 G Value Unit ...

  • Page 2

    ... Parameter Thermal characteristics Electrical characteristics, T Static characteristics Symbol Conditions IPB030N08N3 G Values Unit min. typ. max. ...

  • Page 3

    ... Parameter Dynamic characteristics Reverse Diode Symbol Conditions IPB030N08N3 G Values Unit min. typ. max. ...

  • Page 4

    ... Power dissipation P T 250 200 150 100 100 T [° Safe operating area [ Drain current 180 160 140 120 100 150 200 0 4 Max. transient thermal impedance IPB030N08N3 G 50 100 150 T [° [s] p 200 0 10 ...

  • Page 5

    ... Typ. output characteristics 500 400 300 200 100 [ Typ. transfer characteristics 300 250 200 150 100 [ Typ. drain-source on resistance Typ. forward transconductance 300 200 100 IPB030N08N3 G T 100 200 300 I [A] D 100 200 I [A] D 400 300 ...

  • Page 6

    ... Drain-source on-state resistance -60 - [° Typ. capacitances 10000 1000 100 [ Typ. gate threshold voltage 100 140 180 -60 12 Forward characteristics of reverse diode IPB030N08N3 100 140 T [°C] j 0.5 1 1.5 V [V] SD 180 2 ...

  • Page 7

    ... Avalanche characteristics 1000 100 [µ Drain-source breakdown voltage -60 - [° Typ. gate charge 100 1000 0 16 Gate charge waveforms 100 140 180 IPB030N08N3 [nC] gate 100 g ate ...

  • Page 8

    ... PG-TO263-7 (D²-Pak) IPB030N08N3 G ...

  • Page 9

    ... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. IPB030N08N3 G ...