IPB030N08N3 G Infineon Technologies, IPB030N08N3 G Datasheet - Page 6

• Manufacturer Part Number: IPB030N08N3 G
• Description: MOSFET N-CH 80V 160A TO263-7
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of IPB030N08N3 G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 3 mOhm @ 100A, 10V
• Drain To Source Voltage (vdss): 80V
• Current - Continuous Drain (id) @ 25° C: 160A
• Vgs(th) (max) @ Id: 3.5V @ 155µA
• Gate Charge (qg) @ Vgs: 117nC @ 10V
• Input Capacitance (ciss) @ Vds: 8110pF @ 40V
• Power - Max: 214W
• Mounting Type: Surface Mount
• Package / Case: D²Pak, TO-263 (7 leads + tab)
• Transistor Polarity: N Channel
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 2.5mohm
• Rds(on) Test Voltage Vgs: 10V
• Voltage Vgs Max: 20V
• Operating Temperature Range: -55°C To +175°C
• Transistor Case Style: TO-263
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SP000444100

9 Drain-source on-state resistance
R
11 Typ. capacitances
C
10000
1000
V
100
10
6
5
4
3
2
1
0
-60
0
T
V
I
-20
20
f
20
V
V
T
DS
j
60
40
[°C]
[V]
100
60
140
180
80
10 Typ. gate threshold voltage
V
12 Forward characteristics of reverse diode
I
V
10
10
10
10
4
3
2
1
0
3
2
1
0
-60
0
T
I
T
V
-20
V
0.5
20
V
T
SD
j
60
[°C]
1
[V]
IPB030N08N3 G
100
1.5
140
180
2